Vapor-Deposited n = 2 Ruddlesden–Popper Interface Layers Aid Charge Carrier Extraction in Perovskite Solar Cells
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- Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
- Univ. of Washington, Seattle, WA (United States)
Interfacial passivation with bulky organic cations such as phenetylammonium iodide has enabled high performance for metal halide perovskite optoelectronic devices. However, the homogeneity of these interfaces and their formation dynamics are poorly understood. Here we study how Ruddlesden-Popper 2D phases form at a 3D perovskite interface when the 2D precursors are introduced via solution or via vapor. When using vapor deposition, we observe uniform coverage of the capping layer and the formation of a predominantly n = 2 Ruddlesden-Popper phase. In contrast, when using solution deposition, we observe the presence of a mixture of n = 2 and n = 1 in the film and the formation of aggregates of the organic cations. As a result of the better phase purity and uniformity, vapor deposition enables higher median solar cell performance with narrower distribution compared to solution-treated films. This study provides fundamental information that the perovskite community can use to better design capping layers to achieve higher charge extraction efficiencies.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry; Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR)
- Grant/Contract Number:
- AC02-05CH11231; DMR-2019444; N00014-20-1-2587; SC0012704; SC0013957; ECC-1542101; ECCS-2025462
- OSTI ID:
- 1972949
- Journal Information:
- ACS Energy Letters, Vol. 8, Issue 3; ISSN 2380-8195
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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