Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

Egbo, Kingsley; Lähnemann, Jonas; Falkenstein, Andreas; Varley, Joel; Bierwagen, Oliver

doi:10.1063/5.0130935

Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

Journal Article · Mon Mar 20 04:00:00 EDT 2023 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0130935· OSTI ID:1972896

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Leibniz-Institut im Forschungsverbund, Berlin (Germany)
RWTH Aachen University (Germany)
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

(La and Ga)-doped tin monoxide [stannous oxide, tin (II) oxide, SnO] thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from ≈ 5 × 10¹⁸ to 2 × 10²¹ cm^-3. In this concentration range, the incorporation of Ga into SnO was limited by the formation of secondary phases observed at 1.2 × 10²¹cm^-3 Ga, while the incorporation of La showed a lower solubility limit. Transport measurements on the doped samples reveal that Ga acts as an acceptor and La as a compensating donor. While Ga doping led to an increase in the hole concentration from 1 × 10¹⁸-1 × 10¹⁹ cm^-3 for unintentionally doped (UID) SnO up to 5 × 10¹⁹cm^-3, La-concentrations well in excess of the UID acceptor concentration resulted in semi-insulating films without detectable n-type conductivity. Ab initio calculations qualitatively agree with our dopant assignment of Ga and La and further predict In_Sn to act as an acceptor as well as Al_Sn and B_Sn as donors. These results show the possibilities of controlling the hole concentration in p-type SnO, which can be useful for a range of optoelectronic and gas-sensing applications.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1972896

Report Number(s):: LLNL-JRNL-839858; 1060574

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 122; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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