Recent Progress in Developing Nb3Sn Conductors With Increased Specific Heat
Journal Article
·
· IEEE Transactions on Applied Superconductivity
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Hyper Tech Research, Inc., Columbus, OH (United States)
- The Ohio State Univ., Columbus, OH (United States)
A possible approach to reducing Nb3Sn magnet training is to increase the energy margin of Nb3Sn conductors by enhancing their specific heat (Cp). For this study, we have been developing Nb3Sn conductors with increased Cp by incorporating substances with high Cp at 2-10 K based on a conductor design that is compatible with standard Nb3Sn strand production. In the past couple of years our efforts have been mainly focused on improving strand design (e.g., position of high- Cp filaments, thickness of the Cu tube for the high-Cp filaments, ratio of the Cu powder to the high-Cp substance, filament spacing, etc.) in order to obtain good strand drawability and to reduce degradation after rolling, which is needed for production of Rutherford cables. We also tried a new high-Cp substance, Gd2O2S, and verified that it has much higher Cp over the whole magnetic field range than the Gd2O3 we used before. With that development work we can now produce high-Cp strands with good drawability and low levels of degradation after rolling. This paper reports our findings and the current status of the development of high-Cp Nb3Sn conductors.
- Research Organization:
- Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- Grant/Contract Number:
- AC02-07CH11359
- OSTI ID:
- 1971790
- Report Number(s):
- FERMILAB-CONF-22-907-TD; oai:inspirehep.net:2654023
- Journal Information:
- IEEE Transactions on Applied Superconductivity, Journal Name: IEEE Transactions on Applied Superconductivity Journal Issue: 5 Vol. 33; ISSN 1051-8223
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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