A Modular SiC High-Frequency Solid-State Transformer for Medium-Voltage Applications: Design, Implementation, and Testing
Journal Article
·
· IEEE Journal of Emerging and Selected Topics in Power Electronics
- General Electric Global Research Center, Niskayuna, NY (United States); General Electric
- General Electric Global Research Center, Niskayuna, NY (United States)
- Applied Materials, Gloucester, MA (United States)
The advancements in wide-bandgap devices are enabling applications of power electronic converters coupled directly with medium-voltage (MV) grids that incorporate galvanic isolation within the converter using high-frequency solid-state transformers (SSTs). This paper presents analysis, design, and the characterization results of a 50-kVA modular soft-switched ac-ac SST using silicon carbide (SiC) MOSFET for MV (>6 kV ac) applications. Here, the SST is comprised of two hard-switched ac-line interface bridges and a resonant dc-dc stage switched at approximately 180 kHz. To minimize the cost of switching elements per ampere and maximize the design flexibility, the design uses multiple discrete SiC devices of, readily available, 1700-V ratings. This paper covers the analysis of soft-switching operation, control architecture, converter design, and system-level integration.
- Research Organization:
- General Electric Global Research Center, Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- EE0007252
- OSTI ID:
- 1971329
- Journal Information:
- IEEE Journal of Emerging and Selected Topics in Power Electronics, Journal Name: IEEE Journal of Emerging and Selected Topics in Power Electronics Journal Issue: 2 Vol. 7; ISSN 2168-6777
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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