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Title: Renormalization of excitonic properties by polar phonons

Journal Article · · Journal of Chemical Physics
DOI:https://doi.org/10.1063/5.0100738· OSTI ID:1969052
ORCiD logo [1]; ORCiD logo [2]
  1. University of California, Berkeley, CA (United States)
  2. University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Kavli Energy NanoScience Institute, Berkeley, CA (United States)

We employ quasiparticle path integral molecular dynamics to study how the excitonic properties of model semiconductors are altered by electron–phonon coupling. We describe ways within a path integral representation of the system to evaluate the renormalized mass, binding energy, and radiative recombination rate of excitons in the presence of a fluctuating lattice. To illustrate this approach, we consider Fröhlich-type electron–phonon interactions and employ an imaginary time influence functional to incorporate phonon-induced effects nonperturbatively. The effective mass and binding energies are compared with perturbative and variational approaches, which provide qualitatively consistent trends. We evaluate electron-hole recombination rates as mediated through both trap-assisted and bimolecular processes, developing a consistent statistical mechanical approach valid in the reaction limited regime. These calculations demonstrate how phonons screen electron–hole interactions, generically reducing exciton binding energies and increasing their radiative lifetimes.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Kwanjeong Educational Foundation; Alfred P. Sloan Foundation; USDOE
Grant/Contract Number:
AC02-05CH11231; KC3103; DEAC02-05-CH11231
OSTI ID:
1969052
Alternate ID(s):
OSTI ID: 1886748
Journal Information:
Journal of Chemical Physics, Vol. 157, Issue 10; ISSN 0021-9606
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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