Hybrid stochastic synapses enabled by scaled ferroelectric field-effect transistors

Islam, A. N. M. Nafiul; Saha, Arnob; Jiang, Zhouhang; Ni, Kai; Sengupta, Abhronil

doi:10.1063/5.0132242

Hybrid stochastic synapses enabled by scaled ferroelectric field-effect transistors

Journal Article · Mon Mar 20 00:00:00 EDT 2023 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0132242· OSTI ID:1962307

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Pennsylvania State Univ., University Park, PA (United States); Penn State University
Pennsylvania State Univ., University Park, PA (United States)
Rochester Inst. of Technology, NY (United States)

Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling nanodevices results in reduction of programming resolution and emergence of stochastic non-idealities. While prior work has mainly focused on binary transitions, in this work, we leverage the stochastic switching of a three-state ferroelectric field-effect transistor to implement a long-term and short-term two-tier stochastic synaptic memory with a single device. Experimental measurements are performed on a scaled 28 nm high-k metal gate technology-based device to develop a probabilistic model of the hybrid stochastic synapse. In addition to the advantage of ultra-low programming energies afforded by scaling, our hardware–algorithm co-design analysis reveals the efficacy of the two-tier memory in comparison to binary stochastic synapses in on-chip learning tasks—paving the way for algorithms exploiting multi-state devices with probabilistic transitions beyond deterministic ones.

View Accepted Manuscript (DOE)

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021118

OSTI ID:: 1962307

Alternate ID(s):: OSTI ID: 1962443

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 122; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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