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Probing Defects and Spin‐Phonon Coupling in CrSBr via Resonant Raman Scattering

Journal Article · · Advanced Functional Materials
 [1];  [2];  [3];  [1];  [1];  [4];  [4];  [1];  [1]
  1. Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
  2. Helmholtz‐Zentrum Dresden‐Rossendorf Abteilung Ressourcenökologie Forschungsstelle Leipzig Permoserstr. 15 04318 Leipzig Germany
  3. Dipartimento di Chimica and NIS Centre Università di Torino via P. Giuria 5 I‐10125 Turin Italy
  4. Department of Inorganic Chemistry University of Chemistry and Technology Prague Technická 5 166 28 Prague 6 Czech Republic
Abstract

Understanding the stability limitations and defect formation mechanisms in 2D magnets is essential for their utilization in spintronic and memory technologies. Here, defects in mono‐ to multilayer CrSBr are correlated with structural, vibrational, and magnetic properties. Resonant Raman scattering is used to reveal distinct vibrational defect signatures. In pristine CrSBr, it is shown that bromine atoms mediate vibrational interlayer coupling, allowing for distinguishing between surface and bulk defect modes. Environmental exposure is shown to cause drastic degradation in monolayers, with the formation of intralayer defects. This is in contrast to multilayers that predominantly show bromine surface defects. Through deliberate ion irradiation, the formation of defect modes is tuned: these are strongly polarized and resonantly enhanced, reflecting the quasi‐‐1D electronic character of CrSBr. Strikingly, pronounced signatures of spin‐phonon coupling of the intrinsic phonon modes and the ion beam‐induced defect modes are observed throughout the magnetic transition temperature. Overall, defect engineering of magnetic properties is possible, with resonant Raman spectroscopy serving as a direct fingerprint of magnetic phases and defects in CrSBr.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
SC0019336
OSTI ID:
1908278
Alternate ID(s):
OSTI ID: 2421168
OSTI ID: 1961888
Journal Information:
Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 12 Vol. 33; ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

References (70)

Lattice Dynamics, Phonon Chirality, and Spin–Phonon Coupling in 2D Itinerant Ferromagnet Fe 3 GeTe 2 journal September 2019
Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr journal August 2020
Quasi‐1D Electronic Transport in a 2D Magnetic Semiconductor journal March 2022
Probing the Spin Dimensionality in Single‐Layer CrSBr Van Der Waals Heterostructures by Magneto‐Transport Measurements journal September 2022
Defect‐Engineered Magnetic Field Dependent Optoelectronics of Vanadium Doped Tungsten Diselenide Monolayers journal June 2022
Ferromagnetic Order at Room Temperature in Monolayer WSe 2 Semiconductor via Vanadium Dopant journal March 2020
Consistent Gaussian basis sets of triple-zeta valence with polarization quality for solid-state calculations journal October 2012
Quantum-mechanical condensed matter simulations with CRYSTAL
  • Dovesi, Roberto; Erba, Alessandro; Orlando, Roberto
  • Wiley Interdisciplinary Reviews: Computational Molecular Science, Vol. 8, Issue 4 https://doi.org/10.1002/wcms.1360
journal March 2018
�ber Chalkogenidhalogenide des dreiwertigen Chroms journal January 1966
Resonant Raman studies of bound excitons in CdS journal October 1980
The one phonon Raman spectrum in microcrystalline silicon journal August 1981
The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors journal June 1986
Magnetic properties of CrSBr journal November 1990
SRIM – The stopping and range of ions in matter (2010)
  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091
journal June 2010
Raman spectroscopy in graphene journal April 2009
A family of high-temperature ferromagnetic monolayers with locked spin-dichroism-mobility anisotropy: MnNX and CrCX (X = Cl, Br, I; C = S, Se, Te) journal March 2019
Strong Spin-Phonon Coupling in Two-Dimensional Magnetic Semiconductor CrSBr journal June 2022
Magnetic Order and Symmetry in the 2D Semiconductor CrSBr journal April 2021
Nanopatterning and Electrical Tuning of MoS 2 Layers with a Subnanometer Helium Ion Beam journal July 2015
Raman Spectroscopy, Photocatalytic Degradation, and Stabilization of Atomically Thin Chromium Tri-iodide journal June 2018
Spin-Selective Hole–Exciton Coupling in a V-Doped WSe2 Ferromagnetic Semiconductor at Room Temperature journal November 2021
Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr journal May 2022
Magnetism and Optical Anisotropy in van der Waals Antiferromagnetic Insulator CrOCl journal September 2019
MoS 2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation journal December 2019
Vacancy-Induced Ferromagnetism of MoS 2 Nanosheets journal February 2015
Degradation Chemistry and Kinetic Stabilization of Magnetic CrI3 journal March 2022
Defect-Induced Magnetic Skyrmion in a Two-Dimensional Chromium Triiodide Monolayer journal July 2021
Photoluminescence Quenching in Single-Layer MoS 2 via Oxygen Plasma Treatment journal August 2014
Wedging Transfer of Nanostructures journal May 2010
Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2 journal March 2010
Structural Defects in Graphene journal November 2010
Strong Photoluminescence Enhancement of MoS 2 through Defect Engineering and Oxygen Bonding journal May 2014
n-Type Behavior of Graphene Supported on Si/SiO 2 Substrates journal September 2008
Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals journal April 2017
Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit journal June 2017
Hopping transport through defect-induced localized states in molybdenum disulphide journal October 2013
Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 journal April 2014
Double-slit photoelectron interference in strong-field ionization of the neon dimer journal January 2019
U1 snRNP regulates cancer cell migration and invasion in vitro journal January 2020
Endothelial ZEB1 promotes angiogenesis-dependent bone formation and reverses osteoporosis journal January 2020
Dynamic magnetic crossover at the origin of the hidden-order in van der Waals antiferromagnet CrSBr journal August 2022
Interlayer electronic coupling on demand in a 2D magnetic semiconductor journal July 2021
Coupling between magnetic order and charge transport in a two-dimensional magnetic semiconductor journal May 2022
Reversible strain-induced magnetic phase transition in a van der Waals magnet journal January 2022
Exciton-coupled coherent magnons in a 2D semiconductor journal September 2022
Magnetism in MoS 2 induced by proton irradiation journal September 2012
Toward reliable density functional methods without adjustable parameters: The PBE0 model journal April 1999
Ab initio analytical Raman intensities for periodic systems through a coupled perturbed Hartree-Fock/Kohn-Sham method in an atomic orbital basis. I. Theory journal October 2013
Charge trapping at the MoS 2 -SiO 2 interface and its effects on the characteristics of MoS 2 metal-oxide-semiconductor field effect transistors journal March 2015
Substrate-induced strain and charge doping in CVD-grown monolayer MoS 2 journal October 2017
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals journal August 2020
The Raman effect in crystals journal October 1964
Phonon Confinement Effect in Two-dimensional Nanocrystallites of Monolayer MoS 2 to Probe Phonon Dispersion Trends Away from Brillouin-Zone Center journal May 2016
Precision cutting and patterning of graphene with helium ions journal October 2009
Helium ion microscopy of graphene: beam damage, image quality and edge contrast journal July 2013
Defect engineering of two-dimensional transition metal dichalcogenides journal April 2016
Robust valley polarization of helium ion modified atomically thin MoS 2 journal November 2017
Enhancement of defect-induced Raman modes at the fundamental absorption edge of electron-irradiated GaAs journal May 1986
Resonance Raman scattering from defects in CdSe journal March 1987
Magnetic ordering effects in the Raman spectra of La 1 − x Mn 1 − x O 3 journal November 1999
Spin-phonon coupling in orthorhombic R Mn O 3 ( R = Pr , Nd , Sm , Eu , Gd , Tb , Dy , Ho , Y ) : A Raman study journal June 2006
Symmetry disquisition on theTiOXphase diagram(X=Br,Cl) journal June 2007
Phonons in single-layer and few-layer MoS 2 and WS 2 journal October 2011
Double-resonant LA phonon scattering in defective graphene and carbon nanotubes journal December 2014
Effect of disorder on Raman scattering of single-layer Mo S 2 journal May 2015
Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe 2 journal August 2018
Magnetism in semiconducting molybdenum dichalcogenides journal December 2018
Near-unity photoluminescence quantum yield in MoS2 journal November 2015
Theory of Spin-Dependent Phonon Raman Scattering in Magnetic Crystals journal October 1973
Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities journal December 2019