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Giant Isotope Effect of Thermal Conductivity in Silicon Nanowires

Journal Article · · Physical Review Letters
 [1];  [2];  [3];  [4];  [5];  [6];  [2];  [7];  [8];  [7]
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Shenzhen Univ. (China)
  2. Rice Univ., Houston, TX (United States)
  3. Univ. of Massachusetts, Amherst, MA (United States)
  4. Tsinghua Univ., Shenzhen (China). Tsinghua-Berkeley Shenzhen Institute (TBSI)
  5. Univ. of California, Berkeley, CA (United States)
  6. Tsinghua Univ., Shenzhen (China). Tsinghua-Berkeley Shenzhen Institute (TBSI); Tsinghua Shenzhen International Graduate School, Shenzhen (China); Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials, Shenzhen (China)
  7. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  8. Univ. of Massachusetts, Amherst, MA (United States); Univ. of Utah, Salt Lake City, UT (United States)
+ Show Author Affiliations
Isotopically purified semiconductors potentially dissipate heat better than their natural, isotopically mixed counterparts as they have higher thermal conductivity (κ). But the benefit is low for Si at room temperature, amounting to only ~10% higher κ for bulk 28Si than for bulk natural Si (natSi). Here we show that in stark contrast to this bulk behavior, 28Si (99.92% enriched) nanowires have up to 150% higher κ than natSi nanowires with similar diameters and surface morphology. Using a first-principles phonon dispersion model, this giant isotope effect is attributed to a mutual enhancement of isotope scattering and surface scattering of phonons in natSi nanowires, correlated via transmission of phonons to the native amorphous SiO2 shell. The Letter discovers the strongest isotope effect of κ at room temperature among all materials reported to date and inspires potential applications of isotopically enriched semiconductors in microelectronics.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
David and Lucile Packard Foundation; National Natural Science Foundation of China (NSFC); National Science Foundation (NSF); Shenzhen Science and Technology Program; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences & Biosciences Division; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1961808
Alternate ID(s):
OSTI ID: 1846848
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 8 Vol. 128; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
acoustic phonons
density functional calculations
elemental semiconductors
first-principle calculations
isotope effect
nanowires
surface scattering
thermal conductivity