Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution

Peng, Hongyu; Chen, Zeyu; Liu, Yafei; Raghothamachar, Balaji; Huang, Xianrong; Assoufid, Lahsen; Dudley, Michael

doi:10.1107/s1600576722004046

Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution

Journal Article · Wed May 25 00:00:00 EDT 2022 · Journal of Applied Crystallography (Online)

DOI:https://doi.org/10.1107/s1600576722004046· OSTI ID:1959351

^[1]; Chen, Zeyu ^[1]; ^[1]; ^[1]; Huang, Xianrong ^[2]; Assoufid, Lahsen ^[2]; Dudley, Michael ^[1]

Stony Brook University, NY (United States)
Argonne National Laboratory (ANL), Lemont, IL (United States). Advanced Photon Source (APS)

Utilization of an Si(331) beam conditioner together with an Si(111) double-crystal monochromator (DCM) enables the angular resolution of synchrotron X-ray topography to be increased by an order of magnitude compared with grazing-incidence topography or back-reflection topography conducted with the DCM alone. This improved technique with extremely small beam divergence is referred to as synchrotron X-ray plane-wave topography (SXPWT). This study demonstrates that the rocking curve width of 4H-SiC 0008 in PWT is only 2.5" and thus the lattice distortion at the scale of 1" will significantly affect the diffracted intensity. This work reports the ultra-high angular resolution in SXPWT which enables detailed probing of the lattice distortion outside the dislocation core in 4H-SiC, where the sign of the Burgers vector can be readily determined through comparison with ray-tracing simulations.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Lemont, IL (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AC02-06CH11357; AR0001028

OSTI ID:: 1959351

Journal Information:: Journal of Applied Crystallography (Online), Journal Name: Journal of Applied Crystallography (Online) Journal Issue: 3 Vol. 55; ISSN 1600-5767

Publisher:: International Union of CrystallographyCopyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
dislocations
ray-tracing simulation
silicon carbide
synchrotron x-ray topography

Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution

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