Ultra-wide bandgap β-Ga2O3 films: Optical, phonon, and temperature response properties

Thapa, Dinesh; Lapp, Jeffrey; Lukman, Isiaka; Bergman, Leah

doi:10.1063/5.0074697

Ultra-wide bandgap β-Ga₂O₃ films: Optical, phonon, and temperature response properties

Journal Article · Fri Dec 17 00:00:00 EST 2021 · AIP Advances

DOI:https://doi.org/10.1063/5.0074697· OSTI ID:1958039

Thapa, Dinesh ^[1]; Lapp, Jeffrey ^[2]; Lukman, Isiaka ^[2]; ^[2]

Univ. of Idaho, Moscow, ID (United States); Washington State University
Univ. of Idaho, Moscow, ID (United States)

Optical and phonon interactions of Ga₂O₃ thin films with nanocrystalline morphology were studied at extreme temperatures. The films were grown using a sputtering technique and analyzed via temperature response transmission, Raman scattering, and high-resolution deep-UV photoluminescence (PL). Raman modes indicated that the structure corresponds to the β-phase. The optical-gap at the range of 77–620 K exhibited a redshift of ~200 meV, with a temperature coefficient of ~0.4 meV/K. The optical-gap at room-temperature is 4.85 eV. The electron–phonon interaction model at that temperature range pointed to a low energy phonon, ~31 meV, that is involved in the thermal properties of the optical-gap. Detailed Urbach energy analysis indicated that defects are the dominant mechanism controlling the band-edge characteristics even at an elevated temperature regime where phonon dominance is usually expected. Defects are attributed to the disordered forms of graphite that were detected via Raman scattering and to the granular morphology of the film. A deep-UV laser with an above bandgap exaction line of 5.1 eV was employed to map the PL of the films. The highly resolved spectra, even at room-temperature, show a strong emission of ~3.56 eV attributed to self-trapped holes (STHs). The STH is discussed and modeled in terms of the self-trapped exciton. Moreover, a very distinct but low-intensity emission was found at 4.85 eV that agrees with the value of the optical-gap and is attributed to bandgap recombination. The intensity ratio between the STH and that of the bandgap was found to be 6:1.

View Accepted Manuscript (DOE)

Research Organization:: Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46386

OSTI ID:: 1958039

Alternate ID(s):: OSTI ID: 1836395

Journal Information:: AIP Advances, Journal Name: AIP Advances Journal Issue: 12 Vol. 11; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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