Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection

Lee, Hyun-Soo; Rahman, Mohammad Wahidur; Verma, Darpan; Poole, Violet M.; Myers, Roberto C.; McCluskey, Matthew D.; Rajan, Siddharth

doi:10.1116/6.0002029

Title: Selectively patterned Mg-doped GaN by SiN_x-driven hydrogen injection

Journal Article · Fri Oct 21 00:00:00 EDT 2022 · Journal of Vacuum Science and Technology B

DOI:https://doi.org/10.1116/6.0002029· OSTI ID:1958026

^[1]; Rahman, Mohammad Wahidur ^[1]; Verma, Darpan ^[1]; Poole, Violet M. ^[2];

^[1];

^[3]; Rajan, Siddharth ^[1]

The Ohio State Univ., Columbus, OH (United States)
Klar Scientific, Pullman, WA (United States)
Klar Scientific, Pullman, WA (United States); Washington State Univ., Pullman, WA (United States)

In this work, we demonstrate a method to achieve selectively patterned Mg-doped GaN layers using hydrogen drive-in through plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN_x) films. Activated Mg-doped GaN layers were selectively deactivated by patterned PECVD SiN_x films with low-temperature annealing and showed high-resistive behavior. Spatially resolved photoluminescence measurements were used to optically verify the deactivation of Mg acceptors and showed distinct features corresponding to activated and deactivated Mg in GaN. The method suggested here provides a simple and effective method to achieve patterned Mg-doped GaN regions without thermal and plasma damage, which could cause degradation of device performance. The proposed method could provide a way to achieve future high-performance GaN lateral and vertical devices that rely on laterally patterned doping.

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Research Organization:: Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE

Grant/Contract Number:: FG02-07ER46386

OSTI ID:: 1958026

Alternate ID(s):: OSTI ID: 1894154

Journal Information:: Journal of Vacuum Science and Technology B, Vol. 40, Issue 6; ISSN 2166-2746

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

References (37)

Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing Fu, Houqiang; Fu, Kai; Liu, Hanxiao Applied Physics Express, Vol. 12, Issue 5 https://doi.org/10.7567/1882-0786/ab1813	journal	May 2019
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN Feigelson, B. N.; Anderson, T. J.; Abraham, M. Journal of Crystal Growth, Vol. 350, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.12.016	journal	July 2012
Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors Benoit, D.; Regolini, J.; Morin, P. Microelectronic Engineering, Vol. 84, Issue 9-10 https://doi.org/10.1016/j.mee.2007.04.071	journal	September 2007
AlGaN/GaN HEMTs-an overview of device operation and applications Mishra, U. K.; Parikh, P.; Wu, Yi-Feng Proceedings of the IEEE, Vol. 90, Issue 6, p. 1022-1031 https://doi.org/10.1109/JPROC.2002.1021567	journal	June 2002
High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings Fu, Houqiang; Fu, Kai; Alugubelli, Shanthan R. IEEE Electron Device Letters, Vol. 41, Issue 1 https://doi.org/10.1109/LED.2019.2954123	journal	January 2020
Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer Chowdhury, Srabanti; Swenson, Brian L.; Mishra, Umesh K. IEEE Electron Device Letters, Vol. 29, Issue 6 https://doi.org/10.1109/LED.2008.922982	journal	June 2008
Thermal Annealing Effects on P-Type Mg-Doped GaN Films Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B https://doi.org/10.1143/JJAP.31.L139	journal	February 1992
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Tsao, J. Y.; Chowdhury, S.; Hollis, M. A. Advanced Electronic Materials, Vol. 4, Issue 1 https://doi.org/10.1002/aelm.201600501	journal	December 2017
Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension Lee, Hyun-Soo; Zhang, Yuxuan; Chen, Zhaoying IEEE Transactions on Electron Devices, Vol. 67, Issue 9 https://doi.org/10.1109/TED.2020.3007133	journal	September 2020
Local vibrational modes of the Mg–H acceptor complex in GaN Götz, W.; Johnson, N. M.; Bour, D. P. Applied Physics Letters, Vol. 69, Issue 24 https://doi.org/10.1063/1.117202	journal	December 1996
Vertical Power p-n Diodes Based on Bulk GaN Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2360861	journal	February 2015
Design and fabrication of planar guard ring termination for high-voltage SiC diodes Sheridan, David C.; Niu, Guofu; Merrett, J. Neil Solid-State Electronics, Vol. 44, Issue 8 https://doi.org/10.1016/S0038-1101(00)00081-2	journal	August 2000
High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination Fu, Houqiang; Fu, Kai; Huang, Xuanqi IEEE Electron Device Letters, Vol. 39, Issue 7 https://doi.org/10.1109/LED.2018.2837625	journal	July 2018
Integration of high permittivity BaTiO₃ with AlGaN/GaN for near-theoretical breakdown field kV-class transistors Rahman, Mohammad Wahidur; Kalarickal, Nidhin Kurian; Lee, Hyunsoo Applied Physics Letters, Vol. 119, Issue 19 https://doi.org/10.1063/5.0070665	journal	November 2021
Normally-off p -GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment Hao, Ronghui; Fu, Kai; Yu, Guohao Applied Physics Letters, Vol. 109, Issue 15 https://doi.org/10.1063/1.4964518	journal	October 2016
Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance Peters, D.; Schörner, R.; Hölzlein, K. -H. Applied Physics Letters, Vol. 71, Issue 20 https://doi.org/10.1063/1.120241	journal	November 1997
Design of single and multiple zone junction termination extension structures for SiC power devices Sheridan, David C.; Niu, Guofu; Cressler, John D. Solid-State Electronics, Vol. 45, Issue 9 https://doi.org/10.1016/S0038-1101(01)00052-1	journal	September 2001
Hybrid BaTiO ₃ /SiN _x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance Rahman, Mohammad Wahidur; Chandrasekar, Hareesh; Razzak, Towhidur Applied Physics Letters, Vol. 119, Issue 1 https://doi.org/10.1063/5.0055946	journal	July 2021
Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation Ji, Dong; Agarwal, Anchal; Li, Wenwen IEEE Transactions on Electron Devices, Vol. 65, Issue 2 https://doi.org/10.1109/TED.2017.2786141	journal	February 2018
Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure Chowdhury, Srabanti; Mishra, Umesh K. IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2277893	journal	October 2013
Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ji, Dong; Laurent, Matthew A.; Agarwal, Anchal IEEE Transactions on Electron Devices, Vol. 64, Issue 3 https://doi.org/10.1109/TED.2016.2632150	journal	March 2017
1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability Nomoto, Kazuki; Song, Bo; Hu, Zongyang IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2506638	journal	February 2016
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT Hao, Ronghui; Xu, Ning; Yu, Guohao IEEE Transactions on Electron Devices, Vol. 65, Issue 4 https://doi.org/10.1109/TED.2018.2803521	journal	April 2018
1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">$\Omega $ </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">$^{2}$ </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates Nie, Hui; Diduck, Quentin; Alvarez, Brian IEEE Electron Device Letters, Vol. 35, Issue 9 https://doi.org/10.1109/LED.2014.2339197	journal	September 2014
Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes Lin, Wei; Wang, Maojun; Yin, Ruiyuan IEEE Electron Device Letters, Vol. 42, Issue 8 https://doi.org/10.1109/LED.2021.3091335	journal	August 2021
Room-temperature photoluminescence of Mg-doped GaN thin films grown by plasma-assisted MOCVD Arifin, Pepen; Subagio, Agus AIP Advances, Vol. 10, Issue 4 https://doi.org/10.1063/5.0004384	journal	April 2020
Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates Aktas, O.; Kizilyalli, I. C. IEEE Electron Device Letters, Vol. 36, Issue 9 https://doi.org/10.1109/LED.2015.2456914	journal	September 2015
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction Yeluri, Ramya; Lu, Jing; Hurni, Christophe A. Applied Physics Letters, Vol. 106, Issue 18 https://doi.org/10.1063/1.4919866	journal	May 2015
Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing Tadjer, Marko J.; Feigelson, Boris N.; Greenlee, Jordan D. ECS Journal of Solid State Science and Technology, Vol. 5, Issue 2 https://doi.org/10.1149/2.0371602jss	journal	December 2015
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension Sung, Woongje; Van Brunt, Edward; Baliga, B. J. IEEE Electron Device Letters, Vol. 32, Issue 7 https://doi.org/10.1109/LED.2011.2144561	journal	July 2011
High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain Ghandi, Reza; Buono, Benedetto; Domeij, Martin IEEE Transactions on Electron Devices, Vol. 58, Issue 8 https://doi.org/10.1109/TED.2011.2154332	journal	August 2011
Properties of the main Mg-related acceptors in GaN from optical and structural studies Monemar, B.; Paskov, P. P.; Pozina, G. Journal of Applied Physics, Vol. 115, Issue 5 https://doi.org/10.1063/1.4862928	journal	February 2014
15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain Salemi, Arash; Elahipanah, Hossein; Jacobs, Keijo IEEE Electron Device Letters, Vol. 39, Issue 1 https://doi.org/10.1109/LED.2017.2774139	journal	January 2018
Silicon nitride and oxynitride films Habraken, F. H. P. M.; Kuiper, A. E. T. Materials Science and Engineering: R: Reports, Vol. 12, Issue 3 https://doi.org/10.1016/0927-796X(94)90006-X	journal	July 1994
Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD Yang, Chris; Pham, John Silicon, Vol. 10, Issue 6 https://doi.org/10.1007/s12633-018-9791-6	journal	April 2018
Evidence for Two Mg Related Acceptors in GaN Monemar, B.; Paskov, P. P.; Pozina, G. Physical Review Letters, Vol. 102, Issue 23 https://doi.org/10.1103/PhysRevLett.102.235501	journal	June 2009
Hydrogen-related, deeply bound excitons in Mg-doped GaN films Juday, R.; Fischer, A. M.; Huang, Y. Applied Physics Letters, Vol. 103, Issue 8 https://doi.org/10.1063/1.4819029	journal	August 2013

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Title: Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection

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Title: Selectively patterned Mg-doped GaN by SiN_x-driven hydrogen injection