Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Ordered nanoscale domains by infiltration of block copolymers

Patent ·
OSTI ID:1924936
A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Number(s):
11,401,385
Application Number:
16/721,667
OSTI ID:
1924936
Country of Publication:
United States
Language:
English

References (53)

Hollow Inorganic Nanospheres and Nanotubes with Tunable Wall Thicknesses by Atomic Layer Deposition on Self-Assembled Polymeric Templates journal January 2007
Nanoscopic Morphologies in Block Copolymer Nanorods as Templates for Atomic-Layer Deposition of Semiconductors journal April 2009
Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers journal September 2010
Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early journal April 2012
Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications journal April 2010
XPS O 1s binding energies for polymers containing hydroxyl, ether, ketone and ester groups journal May 1991
Group Frequency Assignments for Major Infrared Bands Observed in Common Synthetic Polymers book January 2007
Ab initio study on the dimer structures of trimethylaluminum and dimethylaluminumhydride journal December 1994
UHV transmission electron microscopy on the reconstructed surface of (111) gold: I. General features journal November 1981
Characterization of tin doped indium oxide films prepared by electron beam evaporation journal January 1986
PRIME process for deep UV and E-beam lithography journal April 1990
Metal Organic Chemical Vapor Deposition book January 2001
Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperature journal November 2000
High sensitive negative silylation process for 193nm lithography journal June 2000
Ab initio molecular simulations with numeric atom-centered orbitals journal November 2009
Accurate vapor pressure equation for trimethylindium in OMVPE journal April 2008
VDD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations journal September 2010
Mobility analysis of surface roughness scattering in FinFET devices journal August 2011
Low-Temperature Al2O3 Atomic Layer Deposition journal February 2004
Hydrolysis of tri-tert-butylaluminum: the first structural characterization of alkylalumoxanes [(R2Al)2O]n and (RAlO)n journal June 1993
Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis journal July 2011
Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors journal February 2008
Two-Dimensional Liquid Phase and the px.sqroot.3 Phase of Alkanethiol Self-Assembled Monolayers on Au(111) journal October 1994
A Route to Nanoscopic Materials via Sequential Infiltration Synthesis on Block Copolymer Templates journal May 2011
Cyclic trimeric hydroxy, amido, phosphido, and arsenido derivatives of aluminum and gallium. X-ray structures of [tert-Bu2Ga(.mu.-OH)]3 and [tert-Bu2Ga(.mu.-NH2)]3 journal January 1993
Hierarchical self-assembly of metal nanostructures on diblock copolymer scaffolds journal December 2001
Enhanced polymeric lithography resists via sequential infiltration synthesis journal July 2011
Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices journal December 1999
Toward reliable density functional methods without adjustable parameters: The PBE0 model journal April 1999
Indium Tin Oxide Films: State-of-the-Art In Synthesis and Properties journal January 1995
Role of oxygen vacancies in the high-temperature thermopower of indium oxide and indium tin oxide films journal January 2009
CD characterization of nanostructures in SEM metrology journal January 2007
Generalized Gradient Approximation Made Simple journal October 1996
An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling journal June 2001
Statistical Modeling and Simulation of Threshold Variation Under Random Dopant Fluctuations and Line-Edge Roughness journal June 2011
Analysis of Poly(methyl methacrylate) (PMMA) by XPS journal April 1996
Study of the fundamental contributions to line edge roughness in a 193 nm, top surface imaging system
  • Somervell, Mark H.; Fryer, David S.; Osborn, Brian
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 5 https://doi.org/10.1116/1.1289547
journal January 2000
Profile evolution during polysilicon gate etching with low-pressure high-density Cl2/HBr/O2 plasma chemistries
  • Tuda, Mutumi; Shintani, Kenji; Ootera, Hiroki
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 3 https://doi.org/10.1116/1.1365135
journal May 2001
Line edge roughness of sub-100 nm dense and isolated features: Experimental study
  • Ma, Yuansheng; Tsvid, G.; Cerrina, Franco
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 6 https://doi.org/10.1116/1.1624254
journal January 2003
Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes
  • Goldfarb, Dario L.; Mahorowala, Arpan P.; Gallatin, Gregg M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 2 https://doi.org/10.1116/1.1667513
journal January 2004
25 nm mechanically buttressed high aspect ratio zone plates: Fabrication and performance
  • Olynick, Deirdre L.; Harteneck, Bruce D.; Veklerov, Eugene
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 6 https://doi.org/10.1116/1.1815298
journal January 2004
Study on line edge roughness for electron beam acceleration voltages from 50 to 5 kV
  • Rio, D.; Constancias, C.; Saied, M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 6 https://doi.org/10.1116/1.3253650
journal January 2009
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication
  • Oehrlein, Gottlieb S.; Phaneuf, Raymond J.; Graves, David B.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 1 https://doi.org/10.1116/1.3532949
journal January 2011
Etch properties of resists modified by sequential infiltration synthesis
  • Tseng, Yu-Chih; Peng, Qing; Ocola, Leonidas E.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 6, Article No. 06FG01 https://doi.org/10.1116/1.3640758
journal November 2011
Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems
  • Thackeray, James W.; Orsula, George W.; Bohland, John F.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 6, Article No. 1620 https://doi.org/10.1116/1.584502
journal November 1989
Application of Plasmask R  resist and the DESIRE process to lithography at 248 nm journal November 1990
Reduction of line edge roughness in the top surface imaging process
  • Mori, Shigeyasu; Morisawa, Taku; Matsuzawa, Nobuyuki
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 6, Article No. 3739 https://doi.org/10.1116/1.590409
journal November 1998
Triple patterning in 10nm node metal lithography journal November 2012
Block Copolymer Lithography: Periodic Arrays of 1011 Holes in 1 Square Centimeter journal May 1997
High Precision Etching of Si/SiO[sub 2] on a High-Density Helicon Etcher for Nanoscale Devices journal January 2003
Optical Characterization and Process Control of Top Surface Imaging journal January 1999
Integrated Silylation and Dry Development of Resist for sub-0.15.MU.m Top Surface Imaging Applications. journal January 1998
Study of Bi-layer Silylation Process for 193 nm Lithography. journal January 1999

Similar Records

Ordered nanoscale domains by infiltration of block copolymers
Patent · Mon Nov 07 23:00:00 EST 2016 · OSTI ID:1331332

Ordered nanoscale domains by infiltration of block copolymers
Patent · Mon Mar 02 23:00:00 EST 2020 · OSTI ID:1632621

Selective sequential infiltration synthesis of ZnO in the liquid crystalline phase of silicon-containing rod-coil block copolymers
Journal Article · Thu Jan 06 19:00:00 EST 2022 · Nanoscale · OSTI ID:1854495

Related Subjects