Sealing behaviour and hall conductivity of mixed-state hall effect in heavy-ion irradiated YBa{sub 2}Cu{sub 3}O{sub 7} crystals
- Korea Institute of Science and Technology, Seoul (Korea, Democratic People`s Republic of)
- Korea Institute of Science and Technology, Seoul (Korea, Democratic People`s Republic of); and others
The Hall effect ({rho}{sub xy}) and longitudinal resistivity ({rho}{sub xx}) measured in YBa{sub 2}Cu{sub 3}O{sub 7} crystals before and after the irradiation of Sn and Xe ions. We found a clear evidence that the strong pinning induced by the columnar defects not only modifies the scaling behavior between the Hall resistivity {rho}{sub xy} and longitudinal resistivity {rho}{sub xx} but also affects the temperature dependence of the Hall conductivity. For the irradiated crystals with columnar defects, the scaling exponent {beta} of {rho}{sub xy} = A{rho}{sub xx}{sup {beta}} was found to be {beta} = 1.55 {+-} 0.1, whereas {beta} of the unirradiated one was larger than 1.8. In case of the Hall conductivity, the pinning strength dependence was also observed. The Hall conductivity after irradiation exhibited a clear deviation from that of the unirradiated crystal at low temperatures. These results are in a good agreement with the work by Wang et al. in which pinning plays an important role.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Korea Science and Engineering Foundation (Korea, Republic of)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 192429
- Report Number(s):
- ANL/MSD/CP--87634; CONF-9508207--1; ON: DE96004816
- Country of Publication:
- United States
- Language:
- English
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