High-frequency phonons drive large phonon-drag thermopower in semiconductors at high carrier density

Li, Chunhua; Protik, Nakib H.; Ravichandran, Navaneetha K.; Broido, David

doi:10.1103/physrevb.107.l081202

Title: High-frequency phonons drive large phonon-drag thermopower in semiconductors at high carrier density

Journal Article · Tue Feb 07 00:00:00 EST 2023 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.107.l081202· OSTI ID:1923498

Li, Chunhua ^[1];

^[2]; Ravichandran, Navaneetha K. ^[3];

^[1]

Boston College, Chestnut Hill, MA (United States)
Humboldt-Universität zu Berlin (Germany)
Indian Inst. of Science, Bangalore (India)

It has been well established that (i) the thermopower of semiconductors can be enhanced through a phe- nomenon known as the drag effect, and (ii) the drag enhancement involves only low-frequency acoustic phonons and benefits from low electron densities and low temperatures. Using first-principles calculations we show that large drag enhancements to the thermopower are possible at high carrier density even at room temperature and arise from high-frequency acoustic phonons. A fascinating example is cubic boron arsenide (BAs) for which the calculated room temperature drag enhancement of the thermopower exceeds an order of magnitude at a high hole density of 10²¹ cm^–3. This remarkable behavior stems from the simultaneously weak phonon-phonon and phonon-hole scattering of the high-frequency phonons in BAs that become drag active at high carrier densities through electron-phonon interactions. Furthermore, this work advances our understanding of coupled electron-phonon nanoscale transport and introduces an unexpected paradigm for achieving large thermopowers.

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Research Organization:: Boston College, Chestnut Hill, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0021071

OSTI ID:: 1923498

Journal Information:: Physical Review. B, Vol. 107, Issue 8; Related Information: https://journals.aps.org/prb/supplemental/10.1103/PhysRevB.107.L081202; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: High-frequency phonons drive large phonon-drag thermopower in semiconductors at high carrier density

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