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Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

Conference ·
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We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); DuraMAT
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1913965
Report Number(s):
NREL/CP-5K00-85068; MainId:85841; UUID:62d7cbb0-b503-40a2-b866-8e4a0b8e6adb; MainAdminID:68513
Country of Publication:
United States
Language:
English

References (4)

Advances in Coring Procedures of Silicon Photovoltaic Modules conference June 2020
Characterization of front contact degradation in monocrystalline and multicrystalline silicon photovoltaic modules following damp heat exposure journal January 2022
Light and Elevated Temperature Induced Degradation (LeTID) in a Utility-Scale Photovoltaic System journal July 2020
Stabilization of light-induced effects in Si modules for IEC 61215 design qualification journal September 2020

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Related Subjects

SOLAR ENERGY
degradation
metallization
photovoltaics
silicon