Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

Conference · 14 November 2022

DOI:https://doi.org/10.1109/PVSC48317.2022.9938799· OSTI ID:1913965

Sulas-Kern, Dana B.; Moutinho, Helio; Erion-Lorico, Tristan; Johnston, Steve

We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; DuraMAT
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1913965
• Report Number(s): NREL/CP-5K00-85068; MainId:85841; UUID:62d7cbb0-b503-40a2-b866-8e4a0b8e6adb; MainAdminID:68513
• Resource Relation: Conference: Presented at the 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), 5-10 June 2022, Philadelphia, Pennsylvania
• Country of Publication: United States
• Language: English

Related Subjects

SOLAR ENERGY
degradation
metallization
photovoltaics
silicon