A unified model for radiation-resistance of advanced space solar cells
Conference
·
OSTI ID:191206
- Toyota Technical Inst., Nagoya (Japan)
- Univ. of Tokyo (Japan)
- NTT Opto-Electrical Labs., Kanagawa (Japan)
1-MeV electron irradiation effects on MBE-grown InGaAs and AlGaAs solar cells have been examined in comparison with previous results for radiation damage of InP and GaAs solar cells in order to clarify radiation-resistance of advanced space solar cells. Moreover, 1-MeV electron irradiation results of several space solar cells such as InP, InGaP, InGaAsP, GaAs, AlGaAs, InGaAs, Si, Ge, and CuInSe{sub 2} cells have also been analyzed by considering their damage constants, bandgap energies and optical absorption coefficients. The authors believe that this study will provide a unified model for radiation-resistance of advanced space solar cells.
- OSTI ID:
- 191206
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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