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Epitaxial lift-off in photovoltaics: Ultra thin Al{sub 0.2}Ga{sub 0.8}As cell in a mechanically stacked (Al,Ga)As/Si tandem

Conference ·
OSTI ID:191150
; ; ; ; ; ;  [1]
  1. Centre National de la Recherche Scientifique, Valbonne (France). Centre de Recherche sur l`Hetero-Epitaxie et ses Applications
The potential of high conversion efficiency of solar energy through the combination of Al{sub 0.2}Ga{sub 0.8}As and Si cells is illustrated by a mechanically stacked tandem using for the first time the epitaxial lift-off (ELO) technique to remove the top cell from its substrate. The selective etching of the GaAs substrate provides efficient light transmission to the bottom cell. Photoluminescence decay experiments show also that substrate removal enhances photon recycling effects. The measured efficiency of the Al{sub 0.2}Ga{sub 0.8}As/Si tandem reaches 21% AM1.5.
OSTI ID:
191150
Report Number(s):
CONF-941203--; ISBN 0-7803-1459-X
Country of Publication:
United States
Language:
English