GaAs one-sun and concentrator solar cells based on LPE-ER grown structures
Conference
·
OSTI ID:191103
- Fraunhofer Inst. fuer Solare Energiesysteme, Freiburg (Germany)
- A.F. Ioffe Physico-Technical Inst., St. Petersburg (Russian Federation)
The liquid-phase epitaxy etchback regrowth (LPE-ER) technique was used to grow AlGaAs/GaAs heteroface and AlGaAs/Al{sub y}Ga{sub 1{minus}y}As (0.1 < y < 0.3) heteroface solar cell structures. The influence of substrate position (vertical or horizontal) during the LPE-ER process was investigated. A model for the growth of the LPE-ER structure in vertical substrate position is proposed. The LPE-ER grown structures were used to fabricate one-sun and concentrator solar cells. Efficiencies of up to 22.4% (AM1.5G) were achieved for solar cells of 4 cm{sup 2} area. For concentrator application an efficiency of 24.8% (AM1.5, direct) was measured at 105 suns on a 13 mm{sup 2} solar cell. A 243 cm{sup 2} aperture area concentrator module consisting of 12 Fresnel lenses and 12 LPE-ER grown-GaAs solar cells showed an efficiency of 20.3% under outdoor conditions.
- OSTI ID:
- 191103
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDE SOLAR CELLS
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIFFUSION
DISSOLUTION
EFFICIENCY
ETCHING
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GOLD ALLOYS
LIQUID PHASE EPITAXY
MAGNESIUM FLUORIDES
MANGANESE ALLOYS
RELIABILITY
SILICON NITRIDES
TIME DEPENDENCE
ZINC ADDITIONS
ZINC SULFIDES
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDE SOLAR CELLS
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIFFUSION
DISSOLUTION
EFFICIENCY
ETCHING
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GOLD ALLOYS
LIQUID PHASE EPITAXY
MAGNESIUM FLUORIDES
MANGANESE ALLOYS
RELIABILITY
SILICON NITRIDES
TIME DEPENDENCE
ZINC ADDITIONS
ZINC SULFIDES