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Title: Low-high heterojunction of c-Si substrate and {micro}c-Si:H film under rear contact for improvement of efficiency

Conference ·
OSTI ID:191013
; ; ; ; ;  [1]
  1. Sharp Corp., Shinjo, Nara (Japan). Energy Conversion Labs.

For improvement of conversion efficiencies of single-crystalline silicon (c-Si) solar cells, the low-high heterojunction structure of p-type c-Si substrate and a highly conductive B doped hydrogenated microcrystalline silicon ({micro}c-Si:H) film with a wide optical bandgap under a rear contact has been investigated. This paper reports that a conversion efficiency of 21.1% was obtained for a 5 cm x 5 cm c-Si solar cell with the {micro}c-Si:H film. This result has come from the examinations of the depositing conditions of the film and the improvement of rear reflection using a SiN film between the {micro}c-Si:H film and the rear contact. From TEM observations, it was clear that the {micro}c-Si:H film consisted of two kinds of domain classified by the crystallite degree of spatial order of Si atoms.

OSTI ID:
191013
Report Number(s):
CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%14
Resource Relation:
Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
Country of Publication:
United States
Language:
English