Short-Range Mechanisms in the Creation of a ZnO/InGaAs Interface

Ciatto, Gianluca; Skopin, Evgeniy V.; Richard, Marie-Ingrid; Fong, Dillon D.; Renevier, Hubert

doi:10.1021/acs.cgd.2c00137

Short-Range Mechanisms in the Creation of a ZnO/InGaAs Interface

Journal Article · Tue Jul 05 00:00:00 EDT 2022 · Crystal Growth and Design

DOI:https://doi.org/10.1021/acs.cgd.2c00137· OSTI ID:1909337

^[1]; Skopin, Evgeniy V. ^[2]; Richard, Marie-Ingrid ^[3]; ^[4]; ^[5]

Synchrotron SOLEIL, Gif-sur-Yvette (France)
Univ. of Grenoble Alpes, Grenoble (France); Laboratoire des Technologies de la Microctronique (LTM), Grenoble (France)
Univ. of Grenoble Alpes, Grenoble (France); European Synchrotron Radiation Facility (ESRF), Grenoble (France)
Argonne National Lab. (ANL), Lemont, IL (United States)
Univ. of Grenoble Alpes, Grenoble (France)

Here we perform quantitative analysis of the X-ray absorption data taken in situ during the earliest cycles of the ZnO atomic layer deposition on atomically flat InGaAs (001) surfaces. As deposition progresses, we observe a transition from an amorphous structure to a nanocrystalline one. The former retains much of the characteristics of a ZnO crystal in the Zn coordination shell, while the latter shows atomic ordering up to at least the third neighbor shell of Zn atoms, despite the absence of Bragg X-ray diffraction peaks. We show that the different chemical preparation of the substrate surface affects the ZnO local structure and that, counterintuitively, a stronger short-range order is obtained in the nanostructures characterized by lower local order at the interface. We propose a model that accounts for these findings.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: LabEx Minos; Nanosciences Foundation; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1909337

Journal Information:: Crystal Growth and Design, Journal Name: Crystal Growth and Design Journal Issue: 8 Vol. 22; ISSN 1528-7483

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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