Strain- and thickness-dependent magnetic properties of epitaxial La0.67Sr0.33CoO3/La0.67Sr0.33MnO3 bilayers

Feng, Mingzhen; Ahlm, Nolan J.; Kane, Alexander M.; Chiu, I-Ting; Sasaki, Dayne Y.; Shafer, Padraic; N'Diaye, Alpha T.; Mehta, Apurva; Takamura, Yayoi

doi:10.1063/5.0122009

Strain- and thickness-dependent magnetic properties of epitaxial La_0.67Sr_0.33CoO₃/La_0.67Sr_0.33MnO₃ bilayers

Journal Article · Mon Nov 14 23:00:00 EST 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0122009· OSTI ID:1908924

^[1]; Ahlm, Nolan J. ^[2]; ^[2]; Chiu, I-Ting ^[2]; ^[2]; ^[3]; ^[3]; ^[4]; ^[2]

University of California, Davis, CA (United States); SLAC
University of California, Davis, CA (United States)
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
SLAC National Accelerator Laboratory, Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)

Magnetic properties and interfacial phenomena of epitaxial perovskite oxides depend sensitively on parameters such as film thickness and strain state. In this work, epitaxial La0_.67Sr_0.33CoO₃(LSCO)/La_0.67Sr_0.33MnO₃ (LSMO) bilayers were grown on NdGaO₃ (NGO) and LaAlO₃ (LAO) substrates with a fixed LSMO thickness of 6 nm, and LSCO thickness (t_LSCO) varying from 2 to 10 nm. Soft x-ray magnetic spectroscopy revealed that magnetically active Co²⁺ions that strongly coupled to the LSMO layer were observed below a critical t_LSCO for bilayers grown on both substrates. On LAO substrates, this critical thickness was 2 nm, above which the formation of Co²⁺ ions was quickly suppressed leaving only a soft LSCO layer with mixed valence Co³⁺/Co⁴⁺ ions. The magnetic properties of both LSCO and LSMO layers displayed strong t_LSCO dependence. This critical t_LSCOincreased to 4 nm on NGO substrates, and the magnetic properties of only the LSCO layer displayed t_LSCO dependence. A non-magnetic layer characterized by Co³⁺ ions and with a thickness below 2 nm exists at the LSCO/substrate interface for both substrates. Therefore, the results contribute to the understanding of interfacial exchange spring behavior needed for applications in next generation spintronic and magnetic memory devices.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC02-76SF00515; AC02-05CH11231

OSTI ID:: 1908924

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 19 Vol. 132; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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