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Title: Enhancing the metal–insulator transition in VO2 heterostructures with graphene interlayers

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0100493· OSTI ID:1908358

In this work, studies were conducted on epitaxial VO2 thin films to assess to the effect of remote epitaxy on the metal–insulator transition (MIT). The epitaxial VO2 heterostructures were synthesized on both bare Al2O3 (0001) substrates and Al2O3 substrates coated with two monolayer-thick graphene. While both systems exhibit the MIT, the film grown by remote epitaxy on graphene demonstrates improved transport properties. Electrical transport measurements show that the on/off ratio is enhanced by a factor of ~7.5 and the switching temperature window is narrower for VO2 thin films grown on graphene. By characterizing the heterostructures with a suite of structural, chemical, and spectroscopic tools, we find that the graphene interlayer inhibits oxygen vacancy diffusion from Al2O3 (0001) during the VO2 growth, resulting in improved electrical behavior at the MIT.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1908358
Alternate ID(s):
OSTI ID: 1882763
Journal Information:
Applied Physics Letters, Vol. 121, Issue 8; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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