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Superconducting phase of Ti x O y thin films grown by molecular beam epitaxy

Journal Article · · Physical Review Materials

Here we investigate the complex relationship between the growth conditions and the structural and transport properties of TixOy thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure POx for films grown on (0001)-Al2O3 substrates at 850° C. A cubic c-TiO1±δ buffer layer is formed for low O/Ti ratios, while a corundum cr-Ti2O3 layer is formed under higher-oxidizing conditions. Metallicity is observed for c-TiO1-δ buffer layers. The superconducting γ -Ti3O5 Magnéli phase is found to nucleate on a c-TiO1-δ buffer for intermediate POx conditions, and an insulator-superconducting transition is observed at 4.5 K (T$$^{onset}_{C}$$ = 6K) for 85 nm thick films. Strain relaxation of γ -Ti3O5 occurs with increasing film thickness and correlates with a thickness-dependent increase in TC observed for TixOy thin films.

Research Organization:
Argonne National Laboratory (ANL), Lemont, IL (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES); State of North Carolina
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1908136
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 6 Vol. 6; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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