Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures
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August 1997 |
Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories
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April 2022 |
Electrical and photoluminescent properties of high‐quality GaSb and AlGaSb layers grown from Sb‐rich solutions by liquid‐phase epitaxy
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February 1995 |
Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices
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September 2015 |
Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
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December 2007 |
Photoluminescence of liquid‐phase epitaxial Te‐doped GaSb
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June 1993 |
Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
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August 2002 |
Thermally induced native defect transform in annealed GaSb
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July 2016 |
A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxy
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April 1986 |
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
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July 2014 |
Origin of Antimony Segregation in Strained-Layer Superlattices
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November 2000 |
Robust Helical Edge Transport in Gated Bilayers
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March 2015 |
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
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November 2009 |
Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors
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November 2017 |
InAs/GaSb Type-II Superlattice Detectors
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January 2014 |
The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
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January 2004 |
Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions
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March 1994 |
Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices
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July 1983 |
Long‐wavelength infrared detectors based on strained InAs–Ga 1− x In x Sb type‐II superlattices
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March 1989 |
Evidence for Helical Edge Modes in Inverted Quantum Wells
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September 2011 |
Heterointerface Engineering of Broken-Gap InAs/GaSb Multilayer Structures
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January 2015 |
Minigaps and Novel Giant Negative Magnetoresistance in InAs/GaSb Semimetallic Superlattices
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October 1997 |
Proposal for strained type II superlattice infrared detectors
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September 1987 |
Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb andGa1−xInxAsySb1−y/GaSb(0.07<~x<~0.22,0.05<~y<~0.19)quaternary alloys using infrared photoreflectance
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December 2000 |
Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection
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October 2012 |
Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors
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December 2021 |
Photoluminescence study of heavy doping effects in Te-doped GaSb
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June 1997 |
Advances in mid-infrared detection and imaging: a key issues review
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August 2014 |
Luminescence and photoconductivity of undoped p-GaSb
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July 1972 |
Comparison of Silicon Photoluminescence and Photoconductive Decay for Material Quality Characterization
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January 2007 |
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
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November 2011 |
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
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October 2010 |
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
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December 2010 |
Simultaneous Measurement of Minority-Carrier Lifetime in Single-Crystal CdTe Using Three Transient Decay Techniques
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September 2014 |
Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices
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November 2015 |
Photoluminescence studies in bulk gallium antimonide
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August 1995 |
Evidence for a topological excitonic insulator in InAs/GaSb bilayers
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December 2017 |
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
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August 2010 |
Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems
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June 1997 |
Processing and Characterization of GaSb/High-k Dielectric Interfaces
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October 2011 |
Temperature dependence of the band gap of GaSb 1−x Bi x alloys with 0 < x ≤ 0.042 determined by photoreflectance
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December 2013 |
Photoexcitation-induced carrier dynamics in an undoped InAs/GaSb quantum well
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March 2016 |
Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms
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November 2014 |
Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure
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January 2020 |
Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals
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April 2019 |
Photoluminescence of high‐quality GaSb grown from Ga‐ and Sb‐rich solutions by liquid‐phase epitaxy
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November 1992 |
Modulated Photoluminescence Mapping of Long-Wavelength Infrared
InAs
/
GaSb
Type-II Superlattice: In-Plane Optoelectronic Uniformity
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April 2021 |
Radiative lifetime in semiconductors for infrared detection
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May 1983 |
Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing
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January 2019 |
InAs/GaSb short-period superlattice injection lasers operating in 2.5 [micro sign]m–3.5 [micro sign]m mid-infrared wavelength range
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journal
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January 2007 |
Recombination lifetime in InAs–Ga1−xInxSb superlattices
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March 1994 |
Low-power tunnel field effect transistors using mixed As and Sb based heterostructures
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December 2013 |
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices
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March 2012 |
Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy
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April 1994 |
Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices
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October 2015 |
Temperature dependence of the energy gap in semiconductors
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January 1967 |
The physics and technology of gallium antimonide: An emerging optoelectronic material
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May 1997 |