In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering

Lee, J. W.; Eom, K.; Paudel, T. R.; Wang, B.; Lu, H.; Huyan, H. X.; Lindemann, S.; Ryu, S.; Lee, H.; Kim, T. H.; Yuan, Y.; Zorn, J. A.; Lei, S.; Gao, W. P.; Tybell, T.; Gopalan, V.; Pan, X. Q.; Gruverman, A.; Chen, L. Q.; Tsymbal, E. Y.; Eom, C. B.

doi:10.1038/s41467-021-26660-7

In-plane quasi-single-domain BaTiO₃ via interfacial symmetry engineering

Journal Article · Sun Nov 21 23:00:00 EST 2021 · Nature Communications

DOI:https://doi.org/10.1038/s41467-021-26660-7· OSTI ID:1904472

Lee, J. W. ^[1]; ^[2]; ^[3]; ^[4]; ^[5]; Huyan, H. X. ^[6]; Lindemann, S. ^[2]; Ryu, S. ^[2]; Lee, H. ^[2]; Kim, T. H. ^[2]; ^[4]; Zorn, J. A. ^[4]; Lei, S. ^[4]; Gao, W. P. ^[6]; ^[7]; ^[4]; ^[6]; ^[5]; ^[4]; ^[5] more »

University of Wisconsin, Madison, WI (United States); OSTI
University of Wisconsin, Madison, WI (United States)
University of Nebraska, Lincoln, NE (United States); South Dakota School of Mines and Technology, Rapid City, SD (United States)
Pennsylvania State University, University Park, PA (United States)
University of Nebraska, Lincoln, NE (United States)
University of California, Irvine, CA (United States)
Norwegian University of Science and Technology, Trondheim (Norway)

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO₃ thin films. Theoretical calculations predict the key role of the BaTiO₃/PrScO₃ (110)_O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.

View Accepted Manuscript (DOE)

Research Organization:: Pennsylvania State University, University Park, PA (United States); University of California, Irvine, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Gordon and Betty Moore Foundation; Vannevar Bush Faculty Fellowship; US Army Research Office (ARO); Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

Grant/Contract Number:: SC0012375; SC0014430; SC0020145

OSTI ID:: 1904472

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 12; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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