Scalable Al 2 O 3 –TiO 2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
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- The Andrew and Erna Viterbi Faculty of Electrical and Computer Engineering Technion – Israel Institute of Technology Haifa 3200003 Israel, Peng Cheng Laboratory Shenzhen 518000 China
- Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USA
- The Andrew and Erna Viterbi Faculty of Electrical and Computer Engineering Technion – Israel Institute of Technology Haifa 3200003 Israel
Abstract Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al 2 O 3 –TiO 2 ‐based valence‐change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al 2 O 3 –TiO 2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence‐change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)‐technology‐compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); Israeli Science Foundation
- Grant/Contract Number:
- 89233218CNA000001; 375/17
- OSTI ID:
- 1898190
- Alternate ID(s):
- OSTI ID: 1902102; OSTI ID: 1924121
- Report Number(s):
- LA-UR-22-30963; 2200800
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Vol. 9 Journal Issue: 2; ISSN 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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