Nonvolatile Electrochemical Random‐Access Memory under Short Circuit

Kim, Diana S.; Watkins, Virgil J.; Cline, Laszlo A.; Li, Jingxian; Sun, Kai; Sugar, Joshua D.; Fuller, Elliot J.; Talin, A. Alec; Li, Yiyang

doi:10.1002/aelm.202200958

Nonvolatile Electrochemical Random‐Access Memory under Short Circuit

Journal Article · Tue Nov 15 00:00:00 EST 2022 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.202200958· OSTI ID:1898170

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Materials Science and Engineering University of Michigan Ann Arbor MI 48109 USA, Macromolecular Science and Engineering University of Michigan Ann Arbor MI 48109 USA
Materials Science and Engineering University of Michigan Ann Arbor MI 48109 USA
Sandia National Laboratories Livermore CA 94550 USA

Abstract

Electrochemical random‐access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in‐memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This short retention has precluded ECRAM from being considered for inference classification in deep neural networks, which is likely the largest opportunity for in‐memory computing. In this work, an ECRAM cell with orders of magnitude longer retention than previously achieved is developed, and which is anticipated to exceed ten years at 85 °C. This study hypothesizes that the origin of this exceptional retention is phase separation, which enables the formation of multiple effectively equilibrium resistance states. This work highlights the promises and opportunities to use phase separation to yield ECRAM cells with exceptionally long, and potentially permanent, retention times.

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Sponsoring Organization:: USDOE

OSTI ID:: 1898170

Alternate ID(s):: OSTI ID: 1908393

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 1 Vol. 9; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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