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AlScO3 perovskite—An ~8 eV bandgap oxide predicted to exhibit low small hole polaron ionization energies and p-type conductivity at elevated temperatures

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0097204· OSTI ID:1897999
Here, we investigate electronic structure and dopability of an ultrawide bandgap (UWBG) AlScO3 perovskite, a known high-pressure and long-lived metastable oxide. From first-principles electronic structure calculations, HSE06(+G0W0), we find this material to exhibit an indirect bandgap of around 8.0 eV. Defect calculations point to cation and oxygen vacancies as the dominant intrinsic point defects limiting extrinsic doping. While acceptor behaving Al and Sc vacancies prevent n-type doping, oxygen vacancies permit the Fermi energy to reach ~0.3 eV above the valence band maximum, rendering AlScO3 p-type dopable. Furthermore, we find that both Mg and Zn could serve as extrinsic p-type dopants. Specifically, Mg is predicted to have achievable net acceptor concentrations of ~1017 cm-3 with ionization energy of bound small hole polarons of ~0.49 eV and free ones below 0.1 eV. These values place AlScO3 among the UWBG oxides with lowest bound small hole polaron ionization energies, which, as we find, is likely due to large ionic dielectric constant that correlates well with low hole polaron ionization energies across various UWBG oxides.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1897999
Alternate ID(s):
OSTI ID: 1886082
Report Number(s):
NREL/JA-5K00-83811; MainId:84584; UUID:52a13960-f951-42a0-96b8-52d9f1bfe4ad; MainAdminID:67774
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 121; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (35)

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges journal December 2017
Ab-initio theory of semiconductor band structures: New developments and progress journal August 2009
Predicting polaronic defect states by means of generalized Koopmans density functional calculations journal September 2010
Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga 2 O 3 , and Diamond: Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga 2 O 3 , and Diamond journal October 2017
The thermal expansion of ScAlO3 — A silicate perovskite analogue journal January 1990
High pressure study of ScAlO 3 perovskite journal September 1998
Elasticity of single-crystal SmAlO3, GdAlO3 and ScAlO3 perovskites journal December 1984
A computational framework for automation of point defect calculations journal April 2017
How Much Will Gallium Oxide Power Electronics Cost? journal April 2019
On the Dopability of Semiconductors and Governing Material Properties journal May 2020
Descriptors for Electron and Hole Charge Carriers in Metal Oxides journal December 2019
A computational survey of semiconductors for power electronics journal January 2019
Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition journal January 1996
Influence of the exchange screening parameter on the performance of screened hybrid functionals journal December 2006
Semiconductors for high‐voltage, vertical channel field‐effect transistors journal March 1982
Communication: The electronic entropy of charged defect formation and its impact on thermochemical redox cycles journal February 2018
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2 journal June 2021
Self-trapped holes and polaronic acceptors in ultrawide-bandgap oxides journal January 2022
First-principles determination of defect energy levels through hybrid density functionals and GW journal March 2015
P -type transparent conducting oxides journal July 2016
Accurate prediction of defect properties in density functional supercell calculations journal November 2009
A survey of acceptor dopants for β -Ga 2 O 3 journal April 2018
Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices journal October 2020
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
Supercell size scaling of density functional theory formation energies of charged defects journal January 2009
Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides journal February 2012
Correcting density functional theory for accurate predictions of compound enthalpies of formation: Fitted elemental-phase reference energies journal March 2012
Band-structure calculations for the 3 d transition metal oxides in G W journal February 2013
Convergence of density and hybrid functional defect calculations for compound semiconductors journal September 2013
Ab initio theory of polarons: Formalism and applications journal June 2019
Optimum semiconductors for high-power electronics journal January 1989
Power Semiconductor Devices for Smart Grid and Renewable Energy Systems journal November 2017
Deep level centers in silicon carbide: A review journal February 1999
Power Electronics for Distributed Energy Systems and Transmission and Distribution Applications: Assessing the Technical Needs for Utility Applications report December 2005

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