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Simplified interconnection structure based on C60/SnO2-x for all-perovskite tandem solar cells

Journal Article · · Nature Energy
 [1];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [3];  [4]
  1. University of North Carolina, Chapel Hill, NC (United States); Department of Applied Physical Sciences, University of North Carolina Chapel Hill, Chapel Hill, NC (United States)
  2. University of North Carolina, Chapel Hill, NC (United States)
  3. Arizona State Univ., Tempe, AZ (United States)
  4. University of North Carolina, Chapel Hill, NC (United States)

The efficiencies of all-perovskite tandem devices are improving quickly. However, their complex interconnection layer (ICL) structures – with typically four or more layers deposited by different processes – limit their prospects for applications. Here, we report an ICL in all-perovskite tandem cells consisting merely of a fullerene layer and a SnO2-x (060 layer is unintentionally n-doped by iodine ions from the perovskite and thus acts as an effective electron collecting layer. The SnO2-x layer, formed by the incomplete oxidization of tin (x=1.76), has ambipolar carrier transport property enabled by the presence of a large density of Sn2+. The C60/SnO1.76 ICL forms Ohmic contacts with both wide and narrow bandgap perovskite subcells with low contact resistivity. The ICL boosts the efficiencies of small-area tandem cells (5.9 mm2) and large-area tandem cells (1.15 cm2) to 24.4% and 22.2%, respectively. Lastly, the tandem cells remain 94% of its initial efficiency after continues 1-sun illumination for 1,000 hours.

Research Organization:
University of North Carolina, Chapel Hill, NC (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0008749
OSTI ID:
1645622
Alternate ID(s):
OSTI ID: 1894780
OSTI ID: 1693431
Journal Information:
Nature Energy, Journal Name: Nature Energy Journal Issue: 9 Vol. 5; ISSN 2058-7546
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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