Structure, Stability, and Electronic Properties of Boron Suboxide: A Density Functional Theory Study
Journal Article
·
· Journal of Physical Chemistry. C
- Kansas State Univ., Manhattan, KS (United States); Kansas State University
- Kansas State Univ., Manhattan, KS (United States)
Boron suboxide (B6O) is a boron-rich compound derived from the α-rhombohedral boron lattice with extreme hardness and unusual semiconducting properties. In this work, density functional theory (DFT) was used to show that unit cell volume, mechanical strength, band gaps, and thermodynamic stabilities of B6O were influenced by the interstitial elements and point defects at the icosahedral sites. While the hexagonal unit cell volume (HUCV) varies with interstitial occupancy, it is the icosahedral defect that weakens the intrinsic bulk modulus of B6O. Using the hybrid HSE functional, we confirmed that the perfect B6O bulk is a p-type semiconductor with a direct band gap of 2.8 eV. Furthermore, by screening α-boron compounds systematically, we found that a simple octet rule may offer a consistent explanation for the variations in the computed electronic structures. The formation free energies calculated over a wide range of temperatures (0–2500 K) and pressures (0–80 GPa) predict that formations of interstitial defects become favorable only at higher temperatures (ca. 1800 K) in bulk B6O lattices. The nudged elastic band (NEB) method was employed to identify the minimum energy pathways for the diffusions of dislocated B and O atoms. The diffusion of icosahedral B atoms has an energy barrier of 0.16 eV. More complex B diffusion paths involving the reorganization of icosahedral boron atoms incur higher barriers (>1 eV). In contrast, the diffusion of interstitial O atoms is facile with a barrier of 0.4 eV. Lastly, successive O insertions into the α-B lattice were performed using DFT to generate a basic understanding of the oxidation process. Furthermore, these calculations provide fundamental atomistic insights into the growth of B6O crystals and control of their point defects.
- Research Organization:
- Kansas State Univ., Manhattan, KS (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- SC0021264; AC02-05CH11231
- OSTI ID:
- 1894427
- Journal Information:
- Journal of Physical Chemistry. C, Journal Name: Journal of Physical Chemistry. C Journal Issue: 37 Vol. 126; ISSN 1932-7447
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of interface bonding and defects on boron diffusion at Si/SiO{sub 2} interface
Synthesis of boron suboxide from boron and boric acid under mild pressure and temperature conditions
Synthesis of boron suboxide (B{sub 6}O) with ball milled boron oxide (B{sub 2}O{sub 3}) under lower pressure and temperature
Journal Article
·
Fri Dec 13 23:00:00 EST 2013
· Journal of Applied Physics
·
OSTI ID:22266175
Synthesis of boron suboxide from boron and boric acid under mild pressure and temperature conditions
Journal Article
·
Sun May 15 00:00:00 EDT 2011
· Materials Research Bulletin
·
OSTI ID:22210059
Synthesis of boron suboxide (B{sub 6}O) with ball milled boron oxide (B{sub 2}O{sub 3}) under lower pressure and temperature
Journal Article
·
Thu Jul 15 00:00:00 EDT 2010
· Journal of Solid State Chemistry
·
OSTI ID:21421564