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Photoconductive charge trapping apparatus

Patent ·
OSTI ID:1893062
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Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Opcondys, Inc., Manteca, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA); Opcondys, Inc. (Manteca, CA)
Patent Number(s):
11,366,401
Application Number:
16/630,273
OSTI ID:
1893062
Country of Publication:
United States
Language:
English

References (6)

High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch journal April 2014
Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates journal January 2004
Carrier lifetime studies of semi-insulating silicon carbide for photoconductive switch applications conference May 2010
6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer journal May 2016
Long-term Adhesion Studies of Polyimide to Inorganic and Metallic Layers journal January 2012
4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates journal May 2016

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