Indirect additive manufacturing process for producing SiC—B4C—Si composites

Patent · Tue Jun 21 04:00:00 EDT 2022

OSTI ID:1893052

Cramer, Corson L.; Lowden, Richard A.; Unocic, Kinga A.; McMurray, Jacob W.; Elliott, Amelia M.

A method for indirect additive manufacturing of an object constructed of boron carbide, silicon carbide, and free silicon, comprising: (i) producing a porous preform constructed of boron carbide and silicon carbide by an indirect ceramic additive manufacturing (ICAM) process in which particles of a powder mixture become bonded together with an organic binder, wherein the powder mixture comprises: a) boron carbide particles, and b) silicon carbide particles, wherein at least 80 vol % of the silicon carbide particles are larger than the boron carbide particles; and wherein the boron carbide and silicon carbide particles are each included in an amount of 40-60 wt. % of the powder mixture, provided that the foregoing amounts sum to at least 95 wt. %; (ii) subjecting the porous preform to a temperature of 500-900° C. to volatilize the organic binder; and (iii) infiltrating molten silicon into pores of the porous preform to produce the object.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• Assignee: UT-Battelle, LLC (Oak Ridge, TN)
• Patent Number(s): 11,364,654
• Application Number: 16/717,356
• OSTI ID: 1893052
• Country of Publication: United States
• Language: English