Thin-film target for DT neutron production

Patent · 24 May 2022

OSTI ID:1892977

Wampler, William R.; Doyle, Barney L.; Snow, Clark S.

A novel thin-film target can the life of tritium targets for the production of 14 MeV neutrons by the 3H(2H,n)4He nuclear reaction while using only a small fraction of the amount of tritium compared to a standard thick-film target. With the thin-film target, the incident deuterium is implanted through the front tritide film into the underlying substrate material. A thin permeation barrier layer between the tritide film and substrate reduces the rate of tritium loss from the tritide film. As an example, good thin-film target performance was achieved using W and Fe for the barrier and substrate materials, respectively.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: NA0003525
• Assignee: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
• Patent Number(s): 11,343,900
• Application Number: 16/930,514
• OSTI ID: 1892977
• Country of Publication: United States
• Language: English