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Ballistic reversible superconducting memory element

Patent ·
OSTI ID:1892769
A reversible memory element is provided. The reversible memory element comprises a reversible memory cell comprising a Josephson junction and a passive inductor. A ballistic interconnect is connected to the reversible memory cell by a bidirectional input/output port. A polarized input fluxon propagating along the ballistic interconnect exchanges polarity with a stationary stored fluxon in the reversible memory cell in response to the input fluxon reflecting off the reversible memory cell.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)
Patent Number(s):
11,289,156
Application Number:
16/943,613
OSTI ID:
1892769
Country of Publication:
United States
Language:
English

References (8)

Ballistic Reversible Gates Matched to Bit Storage: Plans for an Efficient CNOT Gate Using Fluxons book January 2018
Asynchronous ballistic reversible computing conference November 2017
Semi-Automated Design of Functional Elements for a New Approach to Digital Superconducting Electronics: Methodology and Preliminary Results conference July 2019
Experimental designs of ballistic reversible logic gates using fluxons conference July 2019
Reversible Fluxon Logic for Future Computing conference July 2019
Progress Towards Reversible Computing With nSQUID Arrays journal June 2009
Progress With Physically and Logically Reversible Superconducting Digital Circuits journal June 2011
Asynchronous Ballistic Reversible Fluxon Logic journal August 2019

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