Gallium nitride electromagnetic pulse arrestor

Kaplar, Robert; Flicker, Jack David; Lavrova, Olga

Gallium nitride electromagnetic pulse arrestor

Patent · 17 January 2022

OSTI ID:1892544

Kaplar, Robert; Flicker, Jack David; Lavrova, Olga

A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm² in a 1 mm² device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm².

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: NA0003525

Assignee:: National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM)

Patent Number(s):: 11,227,844

Application Number:: 16/589,428

OSTI ID:: 1892544

Country of Publication:: United States

Language:: English

References (12)

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27 kV, 20 A 4H-SiC n-IGBTs van Brunt, Edward; Cheng, Lin; O'Loughlin, Michael J. Materials Science Forum, Vol. 821-823 https://doi.org/10.4028/www.scientific.net/MSF.821-823.847	journal	June 2015
5.0 kV breakdown-voltage vertical GaN p–n junction diodes Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa Japanese Journal of Applied Physics, Vol. 57, Issue 4S https://doi.org/10.7567/JJAP.57.04FG09	journal	February 2018
Reliability studies of vertical GaN devices based on bulk GaN substrates Kizilyalli, Isik C.; Bui-Quang, P.; Disney, D. Microelectronics Reliability, Vol. 55, Issue 9-10 https://doi.org/10.1016/j.microrel.2015.07.012	journal	August 2015
Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates Aktas, O.; Kizilyalli, I. C. IEEE Electron Device Letters, Vol. 36, Issue 9 https://doi.org/10.1109/LED.2015.2456914	journal	September 2015
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Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV Ohta, Hiroshi; Kaneda, Naoki; Horikiri, Fumimasa IEEE Electron Device Letters, Vol. 36, Issue 11 https://doi.org/10.1109/LED.2015.2478907	journal	November 2015
High voltage and high current density vertical GaN power diodes Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M. Electronics Letters, Vol. 52, Issue 13 https://doi.org/10.1049/el.2016.1156	journal	June 2016
21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension Niwa, Hiroki; Suda, Jun; Kimoto, Tsunenobu Applied Physics Express, Vol. 5, Issue 6 https://doi.org/10.1143/APEX.5.064001	journal	May 2012
Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J. IEEE Transactions on Power Electronics, Vol. 32, Issue 12 https://doi.org/10.1109/TPEL.2017.2657491	journal	December 2017
Current status and perspectives of ultrahigh-voltage SiC power devices Kimoto, T.; Yonezawa, Y. Materials Science in Semiconductor Processing, Vol. 78 https://doi.org/10.1016/j.mssp.2017.10.010	journal	May 2018
Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes King, M. P.; Kaplar, R. J.; Dickerson, J. R. Applied Physics Letters, Vol. 109, Issue 18 https://doi.org/10.1063/1.4966903	journal	October 2016

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