Thermal diffusivity recovery and defect annealing kinetics of self-ion implanted tungsten probed by insitu transient grating spectroscopy

Reza, Abdallah; He, Guanze; Dennett, Cody A.; Yu, Hongbing; Mizohata, Kenichiro; Hofmann, Felix

doi:10.1016/j.actamat.2022.117926

Thermal diffusivity recovery and defect annealing kinetics of self-ion implanted tungsten probed by insitu transient grating spectroscopy

Journal Article · Thu Apr 07 04:00:00 EDT 2022 · Acta Materialia

DOI:https://doi.org/10.1016/j.actamat.2022.117926· OSTI ID:1889730

^[1]; He, Guanze ^[1]; ^[2]; Yu, Hongbing ^[3]; Mizohata, Kenichiro ^[4]; ^[1]

University of Oxford (United Kingdom)
Idaho National Lab. (INL), Idaho Falls, ID (United States)
University of Oxford (United Kingdom); Canadian Nuclear Laboratories, Chalk River, ON (Canada)
University of Helsinki (Finland)

Tungsten is a promising candidate material for plasma-facing armour components in future fusion reactors. A key concern is irradiation-induced degradation of its normally excellent thermal transport properties. In this comprehensive study, thermal diffusivity degradation in ion-implanted tungsten and its evolution from room temperature (RT) to 1073 K is considered. Five samples were exposed to 20 MeV self-ions at RT to achieve damage levels ranging from 3.2 x 10^-4 to 3.2 displacements per atom (dpa). Transient grating spectroscopy with in-situ heating was then used to study thermal diffusivity evolution as a function of temperature. Using a kinetic theory model, an equivalent point defect density is estimated from the measured thermal diffusivity. The results showed a prominent recovery of thermal diffusivity between 450 K and 650 K, which coincides with the onset of mono-vacancy mobility. After 1073 K annealing samples with initial damage of 3.2 x 10^-3 dpa or less recover close to the pristine value of thermal diffusivity. For doses of 3.2 x 10^-2 dpa or higher, on the other hand, a residual reduction in thermal diffusivity remains even after 1073 K annealing. Transmission electron microscopy reveals that this is associated with extended, irradiation-induced dislocation structures that are retained after annealing. A sensitivity analysis shows that thermal diffusivity provides an efficient tool for the assessing total defect content in tungsten up to 1000 K.

View Accepted Manuscript (DOE)

Research Organization:: Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES); European Research Council (ERC)

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 1889730

Report Number(s):: INL/JOU-21-64992

Journal Information:: Acta Materialia, Journal Name: Acta Materialia Journal Issue: - Vol. 232; ISSN 1359-6454

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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annealing
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Thermal diffusivity recovery and defect annealing kinetics of self-ion implanted tungsten probed by insitu transient grating spectroscopy

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