Highly Enhanced Curie Temperature in Ga-Implanted Fe3GeTe2 van der Waals Material

Yang, M; Li, Q; Chopdekar, RV; Stan, C; Cabrini, S; Choi, JW; Wang, S; Wang, T; Gao, N; Scholl, A; Tamura, N; Hwang, C; Wang, F; Qiu, Z

doi:10.1002/qute.202000017

Highly Enhanced Curie Temperature in Ga-Implanted Fe3GeTe2 van der Waals Material

Journal Article · Wed Apr 01 04:00:00 EDT 2020 · Advanced Quantum Technologies

DOI:https://doi.org/10.1002/qute.202000017· OSTI ID:1887193

Yang, M; Li, Q; Chopdekar, RV; Stan, C; Cabrini, S; Choi, JW; Wang, S; Wang, T; Gao, N; Scholl, A; Tamura, N; Hwang, C; Wang, F; Qiu, Z

Among many efforts in the research of van der Waals (vdW) magnetic materials, increasing the Curie temperature above room temperature has been at the center of research in developing spintronics technology using vdW materials. Here an effective and reliable method of increasing the Curie temperature of ferromagnetic Fe3GeTe2 vdW materials by Ga implantation is reported. It is found that implanting Ga into Fe3GeTe2 by the amount of 10-3 Ga Å-3 could greatly enhance the Fe3GeTe2 Curie temperature by almost 100%. Spatially resolved microdiffraction and element-resolved X-ray absorption spectroscopy show little changes in the Fe3GeTe2 crystal structure and Fe valence state. In addition, the Ga implantation changes the Fe3GeTe2 magnetization from out-of-plane direction at low temperature to in-plane direction at high temperature. The result opens a new opportunity for tailoring the magnetic properties of vdW materials beyond room temperature.

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22), Scientific User Facilities Division (SC-22.3 )

DOE Contract Number:: AC02-05CH11231

OSTI ID:: 1887193

Journal Information:: Advanced Quantum Technologies, Journal Name: Advanced Quantum Technologies Journal Issue: 4 Vol. 3

Country of Publication:: United States

Language:: English

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