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High-throughput investigation of structural evolution upon solid-state in Cu–Cr–Co combinatorial multilayer thin-film

Journal Article · · Materials & Design
 [1];  [1];  [2];  [1];  [1];  [3];  [4];  [1]
  1. Shanghai Jiao Tong Univ. (China)
  2. Shanghai Jiao Tong Univ. (China); Northwestern Univ., Evanston, IL (United States)
  3. City Univ. of Hong Kong, Kowloon (Hong Kong)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
Cu-Cr-Co combinatorial multilayer thin-films were prepared by a high-throughput ion beam sputtering system. Based on the thickness ratio among the individual nanoscale monolayers (Cu, Cr, Co), the resulting stoichiometry covered the entire phase diagram. The chemical composition and structure of Cu-Cr-Co combinatorial chip upon solid-state reaction were studied by lab-based micro-X-ray fluorescence (mu-XRF) and high-throughput synchrotron X-ray diffraction (XRD), respectively. A composition-structure map for Cu-Cr-Co combinatorial chip was developed through automated data analysis employing hierarchical clustering techniques. The structural evolution of Cu-Cr-Co combinatorial chip as a function of heat-treatment temperature, time, and modulation period were studied systematically. Furthermore, the effect of the elemental distribution in-depth direction was investigated to gain more insights regarding phase transformation. This work provides an efficient method and new perspectives for the design and optimization of the composition and structure of high-performance thin-films.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Key Basic Research Program of China
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1885799
Journal Information:
Materials & Design, Journal Name: Materials & Design Vol. 215; ISSN 0264-1275
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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