Gate-tunable modulation of the optical properties of multilayer graphene by the reversible intercalation of ionic liquid anions

Cai, Zhi; Aravind, Indu; Weinstein, Haley; Li, Ruoxi; Wu, Jiangbin; Wang, Han; Habif, Jonathan; Cronin, Stephen B.

doi:10.1063/5.0093651

Gate-tunable modulation of the optical properties of multilayer graphene by the reversible intercalation of ionic liquid anions

Journal Article · Tue Sep 06 00:00:00 EDT 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0093651· OSTI ID:1979091

^[1]; Aravind, Indu ^[2]; Weinstein, Haley ^[2]; Li, Ruoxi ^[2]; Wu, Jiangbin ^[2]; Wang, Han ^[2]; Habif, Jonathan ^[3]; ^[2]

Univ. of Southern California, Los Angeles, CA (United States); Univ. of Southern California, Los Angeles, CA (United States)
Univ. of Southern California, Los Angeles, CA (United States)
Univ. of Southern California, Los Angeles, CA (United States); Univ. of Southern California, Waltham, MA (United States). Information Sciences Institute

We demonstrate a substantial modulation of the optical properties of multilayer graphene (~100 layers) using a simple device consisting of a multilayer graphene/polymer electrolyte membrane/gold film stack. Applying a voltage of 3–4 V drives the intercalation of anion [TFSI]^- [ion liquid diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME][TFSI]] resulting in the reversible modulation of the properties of this optically dense material. Upon intercalation, we observe an abrupt shift of 35 cm^-1 in the G band Raman mode, an abrupt increase in FTIR reflectance over the wavelength range from 1.67 to 5 $$μ$$m (2000–6000 cm^-1), and an abrupt increase in luminescent background observed in the Raman spectra of graphene. Furthermore, all of these abrupt changes in the optical properties of this material arise from the intercalation of the TFSI^- ion and the associated change in the free carrier density (Δ$$n$$ = 10²⁰ cm^-3). Suppression of the 2D band Raman mode observed around 3 V corresponds to Pauli blocking of the double resonance Raman process and indicates a modulation of the Fermi energy of Δ$$E$$_F = 1.1 eV.

View Accepted Manuscript (DOE)

Research Organization:: University of Southern California, Los Angeles, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); US Army Research Office (ARO); USDOE; USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-07ER46376

OSTI ID:: 1979091

Alternate ID(s):: OSTI ID: 1885634

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 132; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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