High-Tc Superconducting Memory Cell
Journal Article
·
· Journal of Superconductivity and Novel Magnetism
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Central Florida, Orlando, FL (United States); Georgia Inst. of Technology, Atlanta, GA (United States). Georgia Tech Research Institute
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Univ. of Central Florida, Orlando, FL (United States)
In this paper, operational principles of a cryogenic memory cell that utilizes high-temperature superconductors (high-Tc) are presented. Such a cell consists of three inductively coupled Josephson junctions coupled via inductors. Design and operational logic of this type of cell were recently introduced and demonstrated for low temperature 4 K environment. The basic memory cell operations (read, write, reset) can be implemented on the same simple circuit and both destructive and non-destructive memory cell operations can be realized. Here, we present the design principles and computational validation of basic memory cell operations (write, read, and reset) for the high-Tc memory cell. In conclusion, our results for the high-Tc memory cell operations show very good resemblance with the previously presented low-temperature 4 K memory cell operations.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1885364
- Journal Information:
- Journal of Superconductivity and Novel Magnetism, Journal Name: Journal of Superconductivity and Novel Magnetism Journal Issue: 2 Vol. 35; ISSN 1557-1939
- Publisher:
- SpringerCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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