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High-Tc Superconducting Memory Cell

Journal Article · · Journal of Superconductivity and Novel Magnetism
 [1];  [2];  [3];  [4]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Central Florida, Orlando, FL (United States); Georgia Inst. of Technology, Atlanta, GA (United States). Georgia Tech Research Institute
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Univ. of Central Florida, Orlando, FL (United States)
In this paper, operational principles of a cryogenic memory cell that utilizes high-temperature superconductors (high-Tc) are presented. Such a cell consists of three inductively coupled Josephson junctions coupled via inductors. Design and operational logic of this type of cell were recently introduced and demonstrated for low temperature 4 K environment. The basic memory cell operations (read, write, reset) can be implemented on the same simple circuit and both destructive and non-destructive memory cell operations can be realized. Here, we present the design principles and computational validation of basic memory cell operations (write, read, and reset) for the high-Tc memory cell. In conclusion, our results for the high-Tc memory cell operations show very good resemblance with the previously presented low-temperature 4 K memory cell operations.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1885364
Journal Information:
Journal of Superconductivity and Novel Magnetism, Journal Name: Journal of Superconductivity and Novel Magnetism Journal Issue: 2 Vol. 35; ISSN 1557-1939
Publisher:
SpringerCopyright Statement
Country of Publication:
United States
Language:
English

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