Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Wang, Ying; Liu, Xinyu; Bac, Seul-Ki; Wang, Jiashu; Furdyna, Jacek K.; Assaf, Badih A.; Zhukovskyi, Maksym; Orlova, Tatyana; Lauter, Valeria; Dilley, Neil R.; Rokhinson, Leonid P.

doi:10.1063/5.0075827

Title: Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Journal Article · Tue Feb 01 00:00:00 EST 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0075827· OSTI ID:1883678

Wang, Ying ^[1];

^[2];

^[2]; Furdyna, Jacek K. ^[2];

^[2]; Zhukovskyi, Maksym ^[2]; Orlova, Tatyana ^[2];

^[3];

^[1];

^[1]

Purdue University, West Lafayette, IN (United States)
University of Notre Dame, IN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Here, we report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF₂, Pb_1-xEu_xSe, GaAs, and Bi₂Se₃ substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi₂Se₃, but along the (111) crystallographic direction on BaF₂ (111) and Pb_1-xEu_xSe (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi₂Se3 and of Bi₂Se₃ on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; 1836758; 2005092; 1905277

OSTI ID:: 1883678

Alternate ID(s):: OSTI ID: 1843056

Journal Information:: Journal of Applied Physics, Vol. 131, Issue 5; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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