Pressure-induced suppression of Jahn–Teller distortions and enhanced electronic properties in high-entropy oxide (Mg0.2Ni0.2Co0.2Zn0.2Cu0.2)O
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China); Stanford Univ., CA (United States); SLAC
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Jahn–Teller distortions are often observed in CuII-containing complex oxides resulting in remarkable changes of physical properties. Tuning the Jahn–Teller distortions with pressure has attracted considerable interest but is less studied in CuII-containing high-entropy oxides (HEOs). We found that pressure can suppress the structural distortions originating from the Jahn–Teller effect of CuO6 octahedra in the rock salt-type (Mg0.2Ni0.2Co0.2Zn0.2Cu0.2)O HEO and significantly modify its electronic properties. Synchrotron x-ray diffraction shows that the structural distortions arising from the Jahn–Teller effect of CuO6 octahedra are progressively suppressed, and the distorted structure evolves into a nearly ideal form under compression. Alternating current impedance and ultraviolet-visible absorption measurements reveal a dramatic resistance drop by more than three orders of magnitude and an obvious bandgap decrease in ~0.1 eV, respectively, accompanied by the pressure-induced suppression of structural distortions. Our study presents a promising route for tuning the structural distortions and the electronic structures of CuII-containing HEOs for optimizing materials functionalities.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Organization:
- National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Grant/Contract Number:
- AC02-05CH11231; AC02-76SF00515
- OSTI ID:
- 1882907
- Alternate ID(s):
- OSTI ID: 1895332
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 119; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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