Interplay between topological valley and quantum Hall edge transport

Geisenhof, Fabian R.; Winterer, Felix; Seiler, Anna M.; Lenz, Jakob; Martin, Ivar; Weitz, R. Thomas

doi:10.1038/s41467-022-31680-y

Interplay between topological valley and quantum Hall edge transport

Journal Article · Wed Jul 20 00:00:00 EDT 2022 · Nature Communications

DOI:https://doi.org/10.1038/s41467-022-31680-y· OSTI ID:1882696

^[1]; ^[1]; Seiler, Anna M. ^[2]; Lenz, Jakob ^[1]; ^[3]; ^[4]

Ludwig Maximilian University of Munich, Munich (Germany)
Ludwig Maximilian University of Munich, Munich (Germany); Gottingen University (Germany)
Argonne National Laboratory (ANL), Lemont, IL (United States). Materials Science Division
Ludwig Maximilian University of Munich, Munich (Germany); Gottingen University (Germany); Center for Nanoscience (CeNS), Munich (Germany); Munich Center for Quantum Science and Technology (MCQST), Munich (Germany)

An established way of realising topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field, topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individually both types of topologically protected states have been investigated, their intriguing interplay remains poorly understood. Here, we focus on the interplay between topological domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of high-quality suspended bilayer graphene. We find that the two-terminal conductance remains approximately constant for low magnetic fields throughout the distinct quantum Hall states since the conduction channels are traded between domain wall and device edges. For high magnetic fields, however, we observe evidence of transport suppression at the domain wall, which can be attributed to the emergence of spectral minigaps. This indicates that stacking domain walls potentially do not correspond to a topological domain wall in the order parameter.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Lemont, IL (United States)

Sponsoring Organization:: Centre for Nanoscience (CeNS); German Research Foundation (DFG); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1882696

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 13; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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