Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd2Se3–MoS2 Heterostructures

Park, Hyoju; Jung, Gang Seob; Ibrahim, Khaled M.; Lu, Yang; Tai, Kuo-Lun; Coupin, Matthew; Warner, Jamie H.

doi:10.1021/acsnano.1c09019

Title: Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd₂Se₃–MoS₂ Heterostructures

Journal Article · Wed Jul 13 00:00:00 EDT 2022 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.1c09019· OSTI ID:1881142

Park, Hyoju ^[1];

^[2]; Ibrahim, Khaled M. ^[1]; Lu, Yang ^[3]; Tai, Kuo-Lun ^[3]; Coupin, Matthew ^[1];

^[1]

Univ. of Texas, Austin, TX (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Oxford (United Kingdom)

Two-dimensional (2D) materials form heterostructures in both the lateral and vertical directions when two different materials are interfaced, but with totally different bonding mechanisms of covalent in-plane to van der Waal’s layered interactions. Understanding how the competition between lateral and vertical forces influences the epitaxial growth is important for future materials development of complex mixed layered heterostructures. In this study, we use atomic-resolution annular dark-field scanning transmission electron microscopy to study the detailed atomic arrangements at mixed 2D heterostructure interfaces composed of two semiconductors with distinctly different crystal symmetry and elemental composition, Pd₂Se₃:MoS₂, in order to understand the role of different chemical bonds on the resultant epitaxy. Pd₂Se₃ is grown off the step edge in bilayer MoS₂, and the vertical and lateral epitaxial relationships of the Pd₂Se₃–MoS₂ heterostructures are investigated. We find that the similarity of geometry at the interface with one metal (Pd or Mo) atoms bonded with two chalcogens (S or Se) are the crucial factors to make the atomically stitched lateral junction of 2D heterostructures. In addition, the vertical van der Waal interactions that are normally dominant in layered materials can be overcome by in-plane forces if the interfacial atomic stitching is high in quality and low in defect density. This knowledge should help guide the approaches for improving the epitaxy in mixed 2D heterostructures and seamless stitching of in-plane 2D heterostructures with various complex monolayer structures.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1881142

Journal Information:: ACS Nano, Vol. 16, Issue 7; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd2Se3–MoS2 Heterostructures

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Title: Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd₂Se₃–MoS₂ Heterostructures