Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links

Cheung, Stanley; Kurczveil, Geza; Hu, Yingtao; Fu, Mingye; Yuan, Yuan; Liang, Di; Beausoleil, Raymond G.

doi:10.1364/PRJ.444991

Title: Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links

Journal Article · Mon Jan 24 00:00:00 EST 2022 · Photonics Research

DOI:https://doi.org/10.1364/PRJ.444991· OSTI ID:1880894

; Kurczveil, Geza; Hu, Yingtao; Fu, Mingye;

;

; Beausoleil, Raymond G.

We discuss the design and demonstration of various III–V/Si asymmetric Mach–Zehnder interferometer (AMZI) and ring-assisted AMZI (de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded III–V/Si metal-oxide-semiconductor capacitor (MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic integration. The second- and third-order MOSCAP AMZI (de-)interleavers exhibit cross-talk (XT) levels down to $- 22$ dB and $- 32 dB$ with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI (de-)interleavers have XT levels down to $- 27$ dB, $- 22$ dB, and $- 20 dB$ for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of $1.6 - 27 μA / {cm}^{2}$ . To the best of our knowledge, we have demonstrated for the first time, athermal III–V/Si MOSCAP (de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0001039

OSTI ID:: 1880894

Journal Information:: Photonics Research, Journal Name: Photonics Research Vol. 10 Journal Issue: 2; ISSN 2327-9125

Publisher:: Optical Society of AmericaCopyright Statement

Country of Publication:: United States

Language:: English

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