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Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures

Journal Article · · Science
 [1];  [1];  [2];  [1];  [3];  [4];  [3];  [5];  [6];  [6];  [5];  [2];  [7];  [3];  [1]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States)
  2. Univ. of California, Riverside, CA (United States)
  3. Stanford Univ., CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Columbia Univ., New York, NY (United States)
  6. National Institute for Materials Science (NIMS), Tsukuba (Japan)
  7. Weizmann Institute of Science, Rehovot (Israel)

Interlayer excitons, electron-hole pairs bound across two monolayer van der Waals semiconductors, offer promising electrical tunability and localizability. Because such excitons display weak electron-hole overlap, most studies have examined only the lowest-energy excitons through photoluminescence. Here, we directly measured the dielectric response of interlayer excitons, which we accessed using their static electric dipole moment. We thereby determined an intrinsic radiative lifetime of 0.40 nanoseconds for the lowest direct-gap interlayer exciton in a tungsten diselenide/molybdenum diselenide heterostructure. We found that differences in electric field and twist angle induced trends in exciton transition strengths and energies, which could be related to wave function overlap, moiré confinement, and atomic reconstruction. Through comparison with photoluminescence spectra, this study identifies a momentum-indirect emission mechanism. Characterization of the absorption is key for applications relying on light-matter interactions.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences & Biosciences Division; Gordon and Betty Moore Foundation; National Science Foundation (NSF); Japan Society for the Promotion of Science (JSPS)
Grant/Contract Number:
AC02-76SF00515; AC02-05CH11231
OSTI ID:
1877892
Journal Information:
Science, Journal Name: Science Journal Issue: 6591 Vol. 376; ISSN 0036-8075
Publisher:
AAASCopyright Statement
Country of Publication:
United States
Language:
English

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