Origin of giant electric-field-induced strain in faulted alkali niobate films

Waqar, Moaz; Wu, Haijun; Ong, Khuong Phuong; Liu, Huajun; Li, Changjian; Yang, Ping; Zang, Wenjie; Liew, Weng Heng; Diao, Caozheng; Xi, Shibo; Singh, David J.; He, Qian; Yao, Kui; Pennycook, Stephen J.; Wang, John

doi:10.1038/s41467-022-31630-8

Origin of giant electric-field-induced strain in faulted alkali niobate films

Journal Article · Thu Jul 07 00:00:00 EDT 2022 · Nature Communications

DOI:https://doi.org/10.1038/s41467-022-31630-8· OSTI ID:1877583

^[1]; ^[2]; ^[3]; ^[4]; Li, Changjian ^[5]; Yang, Ping ^[5]; Zang, Wenjie ^[5]; Liew, Weng Heng ^[2]; ^[5]; ^[3]; ^[6]; ^[5]; ^[7]; ^[8]; ^[9]

National Univ. of Singapore (Singapore); Inst. of Materials Research and Engineering (IMRE) (Singapore); National Univ. of Singapore (Singapore); University of Missouri
Inst. of Materials Research and Engineering (IMRE) (Singapore)
A*STAR (Agency for Science, Technology and Research) (Singapore)
Xi’an Jiaotong Univ. (China)
National Univ. of Singapore (Singapore)
Univ. of Missouri, Columbia, MO (United States)
Inst. of Materials Research and Engineering (IMRE) (Singapore); National Univ. of Singapore (Singapore)
National Univ. of Singapore (Singapore); National Univ. of Singapore (Singapore)
National Univ. of Singapore (Singapore); Inst. of Materials Research and Engineering (IMRE) (Singapore); National Univ. of Singapore (Singapore)

A large electromechanical response in ferroelectrics is highly desirable for developing high-performance sensors and actuators. Enhanced electromechanical coupling in ferroelectrics is usually obtained at morphotropic phase boundaries requiring stoichiometric control of complex compositions. Recently it was shown that giant piezoelectricity can be obtained in films with nanopillar structures. Here, we elucidate its origin in terms of atomic structure and demonstrate a different system with a greatly enhanced response. This is in non-stoichiometric potassium sodium niobate epitaxial thin films with a high density of self-assembled planar faults. A giant piezoelectric coefficient of ~1900 picometer per volt is demonstrated at 1 kHz, which is almost double the highest ever reported effective piezoelectric response in any existing thin films. The large oxygen octahedral distortions and the coupling between the structural distortion and polarization orientation mediated by charge redistribution at the planar faults enable the giant electric-field-induced strain. Our findings demonstrate an important mechanism for realizing the unprecedentedly giant electromechanical coupling and can be extended to many other material functions by engineering lattice faults in non-stoichiometric compositions.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Missouri, Columbia, MO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0019114

OSTI ID:: 1877583

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 13; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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