Gate-Tunable Transport in Quasi-One-Dimensional α-Bi4I4 Field Effect Transistors

Liu, Yulu; Chen, Ruoyu; Zhang, Zheneng; Bockrath, Marc; Lau, Chun Ning; Zhou, Yan-Feng; Yoon, Chiho; Li, Sheng; Liu, Xiaoyuan; Dhale, Nikhil; Lv, Bing; Zhang, Fan; Watanabe, Kenji; Taniguchi, Takashi; Huang, Jianwei; Yi, Ming; Oh, Ji Seop; Birgeneau, Robert J.

doi:10.1021/acs.nanolett.1c04264

Title: Gate-Tunable Transport in Quasi-One-Dimensional α-Bi₄I₄ Field Effect Transistors

Journal Article · Tue Jan 25 00:00:00 EST 2022 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.1c04264· OSTI ID:1877042

Liu, Yulu ^[1];

^[1]; Zhang, Zheneng ^[1];

^[1];

^[1]; Zhou, Yan-Feng ^[2]; Yoon, Chiho ^[3]; Li, Sheng ^[2]; Liu, Xiaoyuan ^[2]; Dhale, Nikhil ^[2];

^[2];

^[4];

^[4]; Huang, Jianwei ^[5]; Yi, Ming ^[5]; Oh, Ji Seop ^[6]; Birgeneau, Robert J. ^[6]

The Ohio State Univ., Columbus, OH (United States)
Univ. of Texas at Dallas, Richardson, TX (United States)
Univ. of Texas at Dallas, Richardson, TX (United States); Seoul National Univ. (Korea, Republic of)
National Institute for Materials Science (NIMS), Tsukuba (Japan)
Rice Univ., Houston, TX (United States)
Univ. of California, Berkeley, CA (United States)

Bi₄I₄ belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi₄I₄ field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi₄I₄ Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES), Materials Sciences & Engineering Division; National Science Foundation (NSF); US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan; Core Research for Evolutional Science and Technology (CREST); Japan Science and Technology Agency (JST)

Grant/Contract Number:: AC02-05CH11231; DMR-1922076; DMR-1921581; DMR-1945351; W911NF-18-1-0416; DMR-1921847; NSF-1921798; FA9550-19-1-0037; JP20H00354; JPMJCR15F3

OSTI ID:: 1877042

Journal Information:: Nano Letters, Vol. 22, Issue 3; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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