Electrical and structural properties of binary Ga–Sb phase change memory alloys

Ume, Rubab; Gong, Haibo; Tokranov, Vadim; Yakimov, Michael; Brew, Kevin; Cohen, Guy; Lavoie, Christian; Schujman, Sandra; Liu, Jing; Frenkel, Anatoly I.; Beckmann, Karsten; Cady, Nathaniel; Oktyabrsky, Serge

doi:10.1063/5.0096022

Title: Electrical and structural properties of binary Ga–Sb phase change memory alloys

Journal Article · Mon Jul 18 00:00:00 EDT 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0096022· OSTI ID:1876466

;

; Tokranov, Vadim; Yakimov, Michael;

; Cohen, Guy; Lavoie, Christian; Schujman, Sandra; Liu, Jing;

; Beckmann, Karsten; Cady, Nathaniel; Oktyabrsky, Serge

Material properties of Ga–Sb binary alloy thin films deposited under ultra-high vacuum conditions were studied for analog phase change memory (PCM) applications. Crystallization of this alloy was shown to occur in the temperature range of 180–264 °C, with activation energy >2.5 eV depending on the composition. X-ray diffraction (XRD) studies showed phase separation upon crystallization into two phases, Ga-doped A7 antimony and cubic zinc-blende GaSb. Synchrotron in situ XRD analysis revealed that crystallization into the A7 phase is accompanied by Ga out-diffusion from the grains. X-ray absorption fine structure studies of the local structure of these alloys demonstrated a bond length decrease with a stable coordination number of 4 upon amorphous-to-crystalline phase transformation. Mushroom cell structures built with Ga–Sb alloys on ø110 nm TiN heater show a phase change material resistance switching behavior with resistance ratio >100 under electrical pulse measurements. TEM and Energy Dispersive Spectroscopy (EDS) studies of the Ga–Sb cells after ∼100 switching cycles revealed that partial SET or intermediate resistance states are attained by the variation of the grain size of the material as well as the Ga content in the A7 phase. A mechanism for a reversible composition control is proposed for analog cell performance. These results indicate that Te-free Ga–Sb binary alloys are potential candidates for analog PCM applications.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012704; SC0012335

OSTI ID:: 1876466

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 132 Journal Issue: 3; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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