Defect-Regulated Frustrated-Lewis-Pair Behavior of Boron Nitride in Ambient Pressure Hydrogen Activation
Journal Article
·
· Journal of the American Chemical Society
- University of Tennessee, Knoxville, TN (United States); Hunan University, Changsha (China)
- University of California, Riverside, CA (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Zhejiang University, Hangzhou (China)
- University of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
We report the construction of heterogeneous frustrated Lewis pairs (FLPs) with performance comparable to or surpassing the homogeneous counterparts in H2 activation is a long-standing challenge. Herein, sterically hindered Lewis acid (“B” center) and Lewis base (“N” center) sites were anchored within the rigid lattice of highly crystalline hexagonal boron nitride (h-BN) scaffolds. The active sites were created via precision defect regulation during the molten-salt-involved (NaNH2 and NaBH4) h-BN construction procedure. The as-afforded h-BN scaffolds achieved highly efficient H2/D2 activation and dissociation under ambient pressure via FLP-like behavior, and attractive catalytic efficiency in hydrogenation reactions surpassing the current heterogeneous analogues.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences & Biosciences Division
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1874637
- Journal Information:
- Journal of the American Chemical Society, Journal Name: Journal of the American Chemical Society Journal Issue: 24 Vol. 144; ISSN 0002-7863
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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